S29GL512S11DHIV20 Allicdata Electronics
Allicdata Part #:

1274-1058-ND

Manufacturer Part#:

S29GL512S11DHIV20

Price: $ 6.30
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 512M PARALLEL 64FBGA
More Detail: FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 1...
DataSheet: S29GL512S11DHIV20 datasheetS29GL512S11DHIV20 Datasheet/PDF
Quantity: 1000
1 +: $ 5.72670
10 +: $ 5.27310
25 +: $ 5.16373
50 +: $ 5.14559
100 +: $ 4.61607
260 +: $ 4.47610
520 +: $ 4.25702
780 +: $ 4.17790
1040 +: $ 4.10791
Stock 1000Can Ship Immediately
$ 6.3
Specifications
Series: GL-S
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)
Description

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The S29GL512S11DHIV20 is a type of Flash memory, which is widely used in consumer, communications and industrial applications due to its power and functionality. This smaller, non-volatile storage device is best suited for applications that require a significant amount of addressable memory. The device is an industry-standard parallel NOR-type Flash memory and offers a high performance data access capability.

The device utilizes both a 16- and 32-bit wide data interface with separate enable and read/write operations, respectively. It also includes two address buses, a separate CE (chip enable) for 25-nsec access time and single data input and output lines. The memory device has a 32-bit internal word length and can accommodate up to 512Mb of memory. As with other similar memory devices, the performance of the S29GL512S11DHIV20 is greatly improved by the simultaneous addressing of two words – a “bursting” feature.

In terms of application fields, the S29GL512S11DHIV20 is typically utilized in embedded systems, cellular phones, cellular routers, automotive infotainment, smart TVs, handheld devices, factory automation and industrial applications. The device is well suited for GUI applications, file storage, video streaming or any application that demands large amounts of memory and high-speed access.

The S29GL512S11DHIV20 operates upon a simple principle of allowing access to memory on a bit by bit basis. This memory device is non-volatile, meaning it can retain stored information even when power is removed. When the device is powered on, the internal controller will read and write data from the device’s memory array. The memory device can also store data such as software programs, videos, audio files, graphics, and other application related source code.

The S29GL512S11DHIV20 Flash memory device provides fast page read-write access times of up to 25 ns with a standby current of just 5 mA. The device also supports standard read, write and erase features, as well as multiple sector erase for higher erase throughput. The device is also well-protected against charge pump protection and stack effectivation as well as offers an operating temperature range of -40°C to +85°C.

The S29GL512S11DHIV20 Flash memory device is a versatile, low power and cost-effective solution for applications that require a significant amount of memory and a high-speed access. Its combination of power and functionality make it an ideal choice for a wide variety of embedded and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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