| Allicdata Part #: | TPN3R704PLL1QTR-ND |
| Manufacturer Part#: |
TPN3R704PL,L1Q |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 40V 80A TSON |
| More Detail: | N-Channel 40V 80A (Tc) 630mW (Ta), 86W (Tc) Surfac... |
| DataSheet: |  TPN3R704PL,L1Q Datasheet/PDF |
| Quantity: | 40000 |
| 5000 +: | $ 0.15943 |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 40V |
| Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id: | 2.4V @ 0.2mA |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 20V |
| FET Feature: | -- |
| Power Dissipation (Max): | 630mW (Ta), 86W (Tc) |
| Operating Temperature: | 175°C |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-TSON Advance (3.3x3.3) |
| Package / Case: | 8-PowerVDFN |
| Series: | U-MOSIX-H |
| Packaging: | Tape & Reel (TR) |
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The Thin-Film Polymeric N-Channel MOSFET with Source-Drain Resistors, model TPN3R704PL,L1Q, is a single-dimensional MOSFET that illustrates exceptional levels of performance and robustness. The device is built using the latest in semiconductor fabrication technology and utilizes optimized source-drain resistors which are integrated within the device. This allows for precise level shifting, fast switching times, and a wide range of applications.
The TPN3R704PL,L1Q is classified as a single-dimensional MOSFET, meaning that it utilizes a single layer of silicon and dielectric material to form the transistors within the device. The device is constructed of a proprietary field-oxide-insulated-oxide (FOIO) structure and contains two distinct Ag Schottky contact layers for the source and drain electrodes, both of which are separated from the substrate of the device. This structure allows for both excellent performance and unparalleled robustness, as well as increased device reliability.
The TPN3R704PL,L1Q features a drain current of up to 30 amps, as well as an on-state rating of up to 500 µA/V. It also has an ultra-low drain-source capacitance of 5 pF, and a breakdown voltage of 1.5V. In addition, the device can be used to operate over a wide temperature range and features a wide range of applications. For instance, it can be used in power supplies, motor control circuits, and pulse bit-loading applications.
The TPN3R704PL,L1Q is a great choice for anyone looking for a reliable, durable, and highly efficient MOSFET. Its FOIO design provides robustness and excellent performance in harsh environments, while the use of source-drain resistors offers increased reliability and fast switching times. In addition, the device\'s wide operating temperature range and low on-state ratings make it suitable for a variety of applications. All in all, the TPN3R704PL,L1Q MOSFET is an ideal choice for any application requiring a reliable, durable, and highly efficient single-dimensional MOSFET.
The specific data is subject to PDF, and the above content is for reference
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