Allicdata Part #: | RN2971FE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2971FE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2971FE(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN2971FE(TE85L,F) is a type of transistor array, pre-biased, that is used for a variety of electronic applications. It is a bipolar junction transistor (BJT) array, composed of two transistors, that are connected to each other in series, and each transistor has its own pre-biased base junction. This type of array is used for many different types of applications including power management, high frequency switching, and power conditioning.
The pre-biased base junction of each transistor in the array is a critical factor in the operation of the RN2971FE(TE85L,F). A minimum bias voltage, typically between 5 and 10 volts, is necessary for the transistor array to operate correctly. This, in combination with the current limiting resistors, helps prevent overdissipation of electrical power during the transistor’s operation. In addition, the bias voltage helps to ensure that the transistors in the array are properly matched and can operate efficiently.
The RN2971FE(TE85L,F) can be used for a variety of applications. One of the most commonly used applications for the array is power management. In this application, the array is used to manage the power flow for a device or a circuit. The array helps to control the voltage and current levels by dissipating power and converting it into electricity.
In addition to power management, the RN2971FE(TE85L,F) can also be used for high frequency switching. In this application, the transistor array is used to rapidly switch a high frequency signal between two states. This allows the signal to be switched rapidly and accurately, and is often used in digital circuits.
Finally, the RN2971FE(TE85L,F) can be used for power conditioning applications. In this application, the array can be used to control the current and voltage levels in a circuit, similar to a rectifier diode. The transistor array helps to ensure the voltage and current level remains stable, which is critical for many electronic applications.
In summary, the RN2971FE(TE85L,F) is a type of pre-biased transistor array with multiple applications. It is composed of two transistors that are connected in series, with each transistor having its own pre-biased base junction. The array is most commonly used for power management, high frequency switching, and power conditioning applications. Its pre-biased design helps to ensure that the transistors are properly matched and that the voltage and current levels are stable and accurate.
The specific data is subject to PDF, and the above content is for reference
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