IKW40N65ES5XKSA1 Allicdata Electronics
Allicdata Part #:

IKW40N65ES5XKSA1-ND

Manufacturer Part#:

IKW40N65ES5XKSA1

Price: $ 3.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT TRENCH 650V 79A TO247-3
More Detail: IGBT Trench 650V 79A 230W Through Hole PG-TO247-3
DataSheet: IKW40N65ES5XKSA1 datasheetIKW40N65ES5XKSA1 Datasheet/PDF
Quantity: 450
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.83500
10 +: $ 2.54331
100 +: $ 2.08398
500 +: $ 1.77408
1000 +: $ 1.49621
Stock 450Can Ship Immediately
$ 3.12
Specifications
Series: TrenchStop™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 79A
Current - Collector Pulsed (Icm): 160A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Power - Max: 230W
Switching Energy: 860µJ (on), 400µJ (off)
Input Type: Standard
Gate Charge: 95nC
Td (on/off) @ 25°C: 19ns/130ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 73ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Description

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IGBTs, short for Insulated Gate Bipolar Transistors, are semiconductor devices that combine MOSFETs and bipolar transistors. They are widely used in applications including motor and inverter controls, power factor correction, power supplies and uninterruptible power systems, as well as many other motor control and inverter circuits. The IKW40N65ES5XKSA1 is a single phase, low-voltage IGBT that is suitable for use in a variety of applications. In this article, we will examine the application field and working principle of the IKW40N65ES5XKSA1.

Application Field

The IKW40N65ES5XKSA1 offers high switching performance including high current gain, low turn-on losses, low switching and collector-emitter voltages, and low switching times. The device is suitable for use in motor control, power conversion, and power factor correction applications, as well as in uninterruptible power systems. The IKW40N65ES5XKSA1 can also be used in a wide variety of other motor control and inverter circuits. It is particularly well-suited for use in applications where space and cost are major factors, as well as for higher-frequency applications where the switching speed of the device is important.

Working Principle

The IKW40N65ES5XKSA1 is a single phase low-voltage IGBT with a built-in body diode. The device is composed of a gate-to-cathode insulated gate field-effect transistor (IGFET), a collector-emitter lateral PNPN bipolar junction transistor (BJT), and a built-in body diode. The device uses a special construction that combines a low-voltage MOSFET and a low-voltage BJT into one device. The IGFET and BJT are connected together in parallel, so that current can flow through either the MOSFET or BJT. The built-in body diode allows reverse current flow when the device is in the off-state.

When the IKW40N65ES5XKSA1 is in the on state, the gate-to-cathode insulated gate field-effect transistor (IGFET) will conduct current, allowing current to flow from the collector node to the emitter node. The transistor provides a high current gain, allowing for increased efficiency. The collector-emitter lateral PNPN bipolar junction transistor (BJT) will also conduct current in the on state, reducing the voltage drop and providing low switching losses. The combined device provides low turn-on and switching times, making it well-suited for use in applications where speed is a factor.

The IKW40N65ES5XKSA1’s low turn-on and switching times, combined with its low operating and collector-emitter voltages, make it an ideal choice for a variety of motor control and inverter circuits. The device’s low voltage and high current gains also make it well-suited for use in power conversion and power factor correction applications. The IKW40N65ES5XKSA1 offers reliable performance and is an excellent choice for applications where space and cost are major factors.

The specific data is subject to PDF, and the above content is for reference

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