RTR025N03TL Discrete Semiconductor Products |
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Allicdata Part #: | RTR025N03TLTR-ND |
Manufacturer Part#: |
RTR025N03TL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 2.5A TSMT3 |
More Detail: | N-Channel 30V 2.5A (Ta) 1W (Ta) Surface Mount TSMT... |
DataSheet: | RTR025N03TL Datasheet/PDF |
Quantity: | 45000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 92 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 4.6nC @ 4.5V |
Vgs (Max): | 12V |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSMT3 |
Package / Case: | SC-96 |
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RTR025N03TL is a Power Metal-oxide-semiconductor field-effect transistor (MOSFET) specifically designed for power applications. It belongs to the family of MOSFETs which are also referred to as single-gate FETs. It is a three-terminal device consisting of a source, a drain and a gate. The device is built using the latest manufacturing technology to ensure high power performance and peak drain current of up to 25A.
RTR025N03TL is specifically designed to be used in High Efficiency, Heavy Load and Switching Applications such as Power Supply, Inverters, Motor Controllers, Switch Mode Power Supplies, Lighting-Control Circuits, and Load Switching Applications in Industrial and Automotive applications. The device provides a low channel on-resistance, low gate charge and low threshold voltage, making it an ideal choice for a wide range of high-power applications.
The working principle of the RTR025N03TL MOSFET is simple yet powerful. When the gate voltage is zero, the device is off and no current can flow through it. When the gate voltage is increased, the voltage across the device increases, allowing an electric current to flow. This current is limited by the device\'s on-resistance, which is the resistance that exists between the drain and the source when the device is on. The on-resistance of the RTR025N03TL is very low, making it ideal for applications where high-current levels are required.
The device also features a ESD protection function which helps to prevent the device from being damaged due to electrostatic discharge. This protection is provided by a series of capacitors connected between the gate and the source. These capacitors effectively absorb the voltage spikes that are generated due to ESD, providing protection for the device. This makes the device an ideal choice for high-power applications where ESD protection is required.
RTR025N03TL also features a high power handling capability due to its built-in Schottky diodes. These diodes are connected between the source and drain and are used to provide protection against high voltage spikes. This feature makes the device an ideal choice for applications such as motor controllers and power supplies where high power handling is required.
The RTR025N03TL MOSFET is an ideal choice for a wide range of high-power applications requiring high current levels and ESD protection. Its low channel on-resistance and low threshold voltage enables it to handle high current levels while its built-in Schottky diodes provide protection against high voltage spikes. Its flexibility, reliability and high power handling capabilities makes it an excellent choice for a variety of power applications.
The specific data is subject to PDF, and the above content is for reference
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