ESDM3031MXT5G Circuit Protection

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Type:	Zener
Bidirectional Channels:	1
Voltage - Reverse Standoff (Typ):	12.4V (Max)
Voltage - Breakdown (Min):	4.4V
Voltage - Clamping (Max) @ Ipp:	7.2V (Typ)
Current - Peak Pulse (10/1000µs):	16A
Power - Peak Pulse:	--
Power Line Protection:	No
Applications:	General Purpose
Capacitance @ Frequency:	20pF @ 1MHz (Max)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	0201 (0603 Metric)
Supplier Device Package:	2-X3DFN (0.62x0.32)

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ESDM3031MXT5G: TVS - Diodes Application Field and Working Principle

Transient voltage surge suppressor (TVS) diodes, also known as TVS - diodes, are commonly used in electronic circuits to protect semiconductor devices against overvoltage induced by electrostatic discharge, spike voltage, surges and other transient voltage threats. One of the reliable and popular transient voltage suppressors available in the market is ESDM3031MXT5G from Littelfuse. In this article, we will discuss the application field and the working principle of ESDM3031MXT5G TVS - diodes.

ESDM3031MXT5G: Application Field and Technical Specification

ESDM3031MXT5G is a small-sized transient voltage suppressor diode in SOD123 package. It is designed for protection of high speed data lines such as Universal Serial Bus (USB) and HDMI from harmful transient voltage threats. It has been tested under various transient voltage surge conditions such as electrostatic discharge, spike voltage and surge voltage, and proved to be one of the safest and reliable TVS - diodes available in the market. ESDM3031MXT5G features a low capacitance (9pF typical) and low clamping voltage (26 volts typical), which makes it suitable for high speed data line applications. Its low leakage current also helps to minimize ground offset and noise caused by charging and discharging of external capacitance. Additionally, its high surge capability (7,500 W peak pulse power per line for 8/20μs waveform) ensures its excellent protection performance against unpredictable high voltage surges.

ESDM3031MXT5G: Working Principle

The working principle of ESDM3031MXT5G is quite simple. It consists of two major components, a zener diode and a MOSFET transistor, which are connected together in series. When a low amplitude of voltage is supplied to the series circuit, the MOSFET transistor remains in OFF state, thus suppressing the voltage at the output of the circuit below the breakdown voltage of the zener diode. On the other hand, when a high amplitude (greater than the breakdown voltage of the zener diode) of voltage is supplied, the MOSFET transistor switches into ON state, thus allowing the current to flow through the circuit. As a result, the voltage at the output of the circuit is clamped to the breakdown voltage of the zener diode, thus protecting the semiconductor devices from the unwanted overvoltage. It should be noted that the ESDM3031MXT5G is designed to limit the transient voltage to the safe range (i.e. its breakdown voltage) and not to suppress the transient voltage completely. This means that the voltage at the output of the circuit may still slightly exceed the breakdown voltage of the zener diode under certain conditions.

Conclusion

ESDM3031MXT5G is a reliable and robust TVS - diode designed to protect high speed data lines against electrostatic discharge, spike voltage, and surge voltage. Its low capacitance, low clamping voltage, low leakage current and high surge capability makes it suitable for use in various applications. Its working principle is also quite simple and efficient, relying on the MOSFET transistor and zener diode combination to clamp the voltage below a certain threshold.

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