ESDM1131MX4T5G Circuit Protection |
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Allicdata Part #: | ESDM1131MX4T5G-ND |
Manufacturer Part#: |
ESDM1131MX4T5G |
Price: | $ 0.03 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | ISOLATED X4DFN VRWM=3.3V |
More Detail: | N/A |
DataSheet: | ESDM1131MX4T5G Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02249 |
Series: | -- |
Part Status: | Active |
Lead Free Status: | Lead free |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 3.3V (Max) |
Voltage - Breakdown (Min): | 4V |
Voltage - Clamping (Max) @ Ipp: | 5.6V (Typ) |
Current - Peak Pulse (10/1000µs): | -- |
Power - Peak Pulse: | -- |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | 4pF @ 1MHz |
Operating Temperature: | -55°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 2-X4DFN (0.45x0.24) |
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TVS (Transient Voltage Suppressor) diodes, also referred to as ESD (electrostatic discharge) diodes, are components used in electronic circuits that provide protection against sudden power surges. The ESDM1131MX4T5G is a silicon-efficient, small-signal TVS diode designed to protect against sudden power surges in high-speed systems. The diode has a voltage range of –40V to 12V, a wide operating temperature range of -55 to +150°C, and is AEC-Q101-qualified to meet automotive requirements. This article will discuss the application field and working principle of the ESDM1131MX4T5G.
Application field
The ESDM1131MX4T5G is designed for high speed signal line protection, and is ideal for applications such as USB 3.0, HDMI, IEEE 1394, and DVI. It can also be used for ESD protection in automotive applications, where it meets the AEC-Q101 standard. The ESDM1131MX4T5G is a small-signal TVS diode, and it provides protection against electrostatic discharge, as well as transients caused by lightning, switches, motors, inductive loads, and other types of electromagnetic interference.
Working Principle
The ESDM1131MX4T5G is a small-signal TVS diode, which is a type of diode designed to protect against electrostatic discharge (ESD). The diode is made up of two parts: a zener diode and a transistor. The zener diode is designed to clamps the voltage when it reaches a certain level, while the transistor works to enhance the diode’s clamping capability by boosting current flow. When the circuit is normally open, the voltage across it is low, and the transistor does not turn on. However, when an ESD event occurs, or when the voltage suddenly rises above the threshold diode\'s clamping voltage, the transistor immediately turns on, allowing a large current to flow through the ESD diode. This current serves to absorb the energy from the ESD event, and protect the rest of the circuit from damage.
The ESDM1131MX4T5G is extremely efficient in its power consumption, making it an ideal choice for high-speed systems. The diode has a low capacitance of 4pF when measuring 1000V, which is significantly lower than the industry-standard of 10pF. This helps reduce power consumption and improve system performance, while still providing the effective protection needed.
Conclusion
The ESDM1131MX4T5G is an efficient and reliable TVS diode designed for high speed signal line protection. The diode has a wide range of applications, from USB 3.0 to automotive, and can provide effective protection against electrostatic discharge events and transients caused by power surges. The diode has a low capacitance of 4pF which helps reduce power consumption, and it is AEC-Q101-qualified to meet automotive requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ESDM1131MX4T5G | ON Semicondu... | 0.03 $ | 1000 | ISOLATED X4DFN VRWM=3.3V |
ESDM3051N2T5G | ON Semicondu... | 0.03 $ | 1000 | TVS DIODE 5V 8.2V 2X3DFN |
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ESDM3031MXT5G | ON Semicondu... | 0.03 $ | 1000 | TVS DIODE 12.4V 7.2V 2X3D... |
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