SMF6.0AHRQG Circuit Protection

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The SMF6.0AHRQG ТVS-Diode is a tungsten-passivated transient voltage suppressor (TVS) developed for automotive applications. The device has a 100 V breakdown voltage and is designed to protect automotive applications against electrical transients. It incorporates a low resistance path to protect sensitive components in the application against overvoltage. This device can be used to provide protection against voltage transients induced by Load Dump, Electrostatic Discharge (ESD), and inductive load switching, or to protect AC lines from transients generated by lightning or load transients.

The SMF6.0AHRQG TVS-Diode has two terminals and is designed to provide one-way circuit protection from transient voltages. In steady-state operation, the device is an open circuit, allowing no current to flow through it. When a transient voltage is applied, the device becomes a short circuit and provides a low resistance path for current to flow. This clamps the voltage to a safe level, thus providing protection for the protected device from the transient voltage.

The SMF6.0AHRQG TVS-Diode has a breakdown voltage of 100 V and a maximum surge current of 5 A. The surge current rating is based on a repetitive 8/20 μs pulse waveform with a 50 % duty cycle at 25°C. Its maximum peak pulse power rating is 600 W. The device has a breakdown voltage of 75 V and a maximum clamping voltage of 130 V.

The SMF6.0AHRQG is a PN junction device that incorporates a MOS gate connection. The transistor gate is used to control the breakdown voltage. The gate resistance is low enough so that the device can switch very quickly to provide protection from transient voltages. The device also has a high capacitance-to-area ratio that helps to reduce capacitive coupling and noise transients.

The SMF6.0AHRQG TVS-Diode provides superior electrostatic discharge (ESD) protection for automotive applications. The device is capable of sustaining service voltages up to 125 V, allowing it to protect automotive circuits from transient voltage spikes. The MOS gate is designed to provide high ESD immunity, making it especially suitable for automotive applications. The device also has a low thermal impedance, allowing it to dissipate the energy associated with high current transients quickly and efficiently.

The SMF6.0AHRQG TVS-Diode is an excellent solution for automotive protection applications. It offers superior protection against transient voltage spikes, load dump, ESD, and inductive load-switching. Furthermore, it has low thermal impedance, allowing it to dissipate energy quickly and efficiently. This device is an excellent choice for automotive protection applications due to its robust construction and excellent performance.

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