P4SMA9.1CAHR3G Allicdata Electronics

P4SMA9.1CAHR3G Circuit Protection

Allicdata Part #:

P4SMA9.1CAHR3G-ND

Manufacturer Part#:

P4SMA9.1CAHR3G

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: TVS DIODE 7.78V 13.4V DO214AC
More Detail: N/A
DataSheet: P4SMA9.1CAHR3G datasheetP4SMA9.1CAHR3G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100800 +: $ 0.05680
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101, P4SMA
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 7.78V
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Current - Peak Pulse (10/1000µs): 31A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Description

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TVS diodes, also known as transient voltage suppressors, are electronic components used to protect sensitive electrical components from high voltage spikes. They are typically used in data and telecommunications, medical, audio, video, industrial, and automotive applications. The P4SMA9.1CAHR3G is a uni-directional TVS diode, designed to provide transient overvoltage protection for a wide variety of industrial, telecom, consumer electronics, automotive and other electronic applications.

The P4SMA9.1CAHR3G is a low-capacitance, avalanche voltage suppressor designed to be used in data, communications, video and power supply applications. It is designed to prot ect circuits at the system level from high voltage transients, which can cause permanent damage to sensitive integrated circuits. The device has a low-capacitance of less than 1 pF, which greatly reduces the signal degradation caused by its injection into the circuit.

The P4SMA9.1CAHR3G has a peak pulse power rating of 9.1 watts, an operating voltage rating of 6.2 V to 26.5 V and a working temperature range of -55°C to + 175°C. It features a low-capacitance silicon avalanche diode (SAD) with a blocking voltage of 9.0 V to 20.3 V, which is suitable for use in high-speed, low-noise applications. The device has a low clamping voltage of 7.6 V typically and is able to withstand very high surge current for any given chip size. It also features a low leakage current rating of 10 μA, which makes it suitable for use in data and telecommunications applications.

The P4SMA9.1CAHR3G is designed for use in data, communications and video lines, where high-speed, low-noise transients may occur. The device\'s high peak pulse power rating allows it to provide protection from large and sudden voltage spikes, which can cause permanent damage to other electronics, as well as cause data loss or damage. Its low-capacitance design reduces the signal distortion caused by its injection into the circuit, allowing it to provide better signal integrity in data and communication systems.

The P4SMA9.1CAHR3G is a uni-directional TVS diode designed to provide protection from high-voltage spikes and surges, while maintaining signal integrity. Its technology of SAD, low capacitance and peak pulse power rating, make it ideal for applications in data, communications, video, industrial, automotive and other electronics. Its low leakage current rating makes it suitable for use in data and telecommunications applications, while its low clamping voltage ensures maximum protection.

The specific data is subject to PDF, and the above content is for reference

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