JAN1N6463 Circuit Protection |
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Allicdata Part #: | 1086-2270-ND |
Manufacturer Part#: |
JAN1N6463 |
Price: | $ 8.40 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 12V 22.6V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6463 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 7.63623 |
Series: | Military, MIL-PRF-19500/551 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 12V |
Voltage - Breakdown (Min): | 13.6V |
Voltage - Clamping (Max) @ Ipp: | 22.6V |
Current - Peak Pulse (10/1000µs): | 125A (8/20µs) |
Power - Peak Pulse: | 500W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | Axial |
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The JAN1N6463 is an integrated circuit in the form of a high-performance transient voltage suppressor (TVS) used to protect sensitive electronics from damage due to excessive voltage and ESD (electrostatic discharge). It is often used in automotive, industrial, and medical applications, as it is highly reliable, low cost, and easily integrated into a host system. This article will provide an overview of the JAN1N6463\'s application field and working principle.
Application Field
The JAN1N6463 is a versatile TVS designed for use in automotive, industrial, and medical applications. In automotive applications, it is used to protect automotive control systems, body electronics, and sensors from damage due to high voltage and ESD events. In industrial applications, it is used to protect sensitive electronic devices from voltage surges caused by lightning and power outages, and to prevent the damage caused by power irregularities such as brownouts, overvoltage, and overcurrent. In medical applications, the JAN1N6463 is used to protect sensitive medical equipment from ESD and overvoltage challenges. It is also used to protect medical implants and other implantable electronic devices from electrostatic discharge.
Working Principle
The JAN1N6463 is a unidirectional TVS device that uses a two-to-one MOSFET structure to absorb the surge current in order to protect sensitive electronics from overvoltage, overcurrent, and ESD events. When the input voltage exceeds the device\'s breakdown voltage, the internal MOSFET structure will automatically activate to clamp the voltage and dissipate the excess energy as heat. The device is designed to hold its voltage until the overvoltage event has passed, when the device will then restore to its normal state.
The JAN1N6463 is designed with a low peak pulse current of 14.3A (tp = 8/20μs) and a maximum surge current of 46.9A (tp = 10/1000μs). This device features a wide range of operation temperatures, from -55°C to +125°C. It also features low dynamic and capacitive coupling capacitance, which prevents unwanted electrical noise, and a low on-state resistance that helps minimize power dissipation. Furthermore, this device is designed to meet the requirements of the IEC 61000-4-2 standard, making it suitable for a wide range of ESD protection applications.
Conclusion
The JAN1N6463 is a versatile integrated circuit (TVS) designed for automotive, industrial, and medical applications. It is designed to protect sensitive electronics from overvoltage, overcurrent, and ESD events. The device is designed with a two-to-one MOSFET structure that allows it to clamp voltage and dissipate excess energy as heat. It features a low peak pulse current, a wide range of operating temperatures, low dynamic and capacitive coupling capacitance, and compliance to the IEC 61000-4-2 standard, making it an ideal choice for protection against ESD events.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
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