JAN1N6124A Allicdata Electronics

JAN1N6124A Circuit Protection

Allicdata Part #:

1086-2203-ND

Manufacturer Part#:

JAN1N6124A

Price: $ 10.98
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 42.6V 77V AXIAL
More Detail: N/A
DataSheet: JAN1N6124A datasheetJAN1N6124A Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100 +: $ 9.97633
Stock 1000Can Ship Immediately
$ 10.98
Specifications
Series: Military, MIL-PRF-19500/516
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 42.6V
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Current - Peak Pulse (10/1000µs): 6.5A
Power - Peak Pulse: 500W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: Axial
Description

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TVS (Transient Voltage Suppressor) diodes are mainly used to protect semiconductors from overvoltage and short circuits. The JAN1N6124A is a TVS-diode specifically designed to protect sensitive electronics from overvoltage conditions from various environmental sources, such as lightning and electrostatic discharge (ESD). It is also capable of passing very low current during normal voltage conditions.

The JAN1N6124A is a uni-directional device, which means that it can block voltages and currents when they are flowing in one direction, and pass them when they are flowing in the other direction. The device is rated for 600 watts and can handle peak current up to 30 amps.

The JAN1N6124A is commonly used to protect automotive ECU’s, military electronics, medical electronic devices, and other sensitive electronic devices from voltage transients, such as those caused by lightning and ESD. It is available in a range of packaging styles, including axial, SMT, and gull wing.

The working principle of the JAN1N6124A is based on several physical phenomena, such as the breakdown voltage of the diode, avalanche breakdown, impact ionization, and thermal runaway. The device is composed of two pn junctions, one on either side of the body. The built-in electric field of the diode is determined by the excess minority carrier concentration which is present in the vicinity of the pn junction.

In normal operation, no external voltage is applied and the electric field of the diode remains constant. However, if a large voltage transient is applied across the diode, the electric field will increase. This increase in electric field leads to charging, displacement, and injection of minority carriers. This avalanche-like process will cause the diode to conduct and the current to pass through the device. In turn, this will also dissipate the overvoltage.

The JAN1N6124A is also designed to pass very low current during normal voltage conditions. This is achieved with a special “soft-breakdown” structure, which makes it possible for the device to conduct current at low voltages, while still providing protection from overvoltage transients.

In summary, the JAN1N6124A is a uni-directional TVS diode specifically designed to protect sensitive electronics from overvoltage conditions. It is composed of two pn junctions, which allow it to conduct current at low voltages and to dissipate overvoltage transients. The device is capable of handling peak currents up to 30 amps, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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