MXSMLJ13AE3/TR Circuit Protection |
|
Allicdata Part #: | MXSMLJ13AE3/TRMS-ND |
Manufacturer Part#: |
MXSMLJ13AE3/TR |
Price: | $ 11.50 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | HI REL TVS |
More Detail: | N/A |
DataSheet: | MXSMLJ13AE3/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 10.45170 |
Series: | Military, MIL-PRF-19500 |
Part Status: | Active |
RoHS Status: | RoHS Compliant |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 13V |
Voltage - Breakdown (Min): | 14.4V |
Voltage - Clamping (Max) @ Ipp: | 21.5V |
Current - Peak Pulse (10/1000µs): | 139.4A |
Power - Peak Pulse: | 3000W (3kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMLJ (DO-214AB) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transient voltage suppressors (TVSs) are widely used for protection of circuits from electrostatic discharge (ESD), lightning, inductive spikes, dipulse, and similar transient overvoltage phenomena. TVS diodes provide a low-cost solution for protecting against transient voltage surges while also not sacrificing the performance of the system. The MXSMLJ13AE3/TR is a surface-mount device designed to protect sensitive electronic components from ESD strikes and other transient voltage signals. It offers minimal capacitance and low inductance to ensure high-speed switching and higher data rates even in the most hostile ESD environments. In this article, we will discuss the application field and working principle of the MXSMLJ13AE3/TR TVS diode.
The MXSMLJ13AE3/TR is designed to withstand between 5 kilovolts and 15 kilovolts in a variety of environmental conditions. This makes it suitable for a wide range of applications such as automotive, communications, medical, industrial, and consumer electronics. The device is available in a SOT-23 package with the standard 6-lead configuration, so it can be easily mounted onto a PCB. This allows for the device to be quickly and easily integrated into a wide range of electronic circuits.
As far as the working principle of the MXSMLJ13AE3/TR is concerned, it works by utilizing a junction diode to conduct current in only one direction – from anode to cathode. When a transient voltage is applied to the diode, it turns on and conducts current from the anode to the cathode, thereby diverting the current away from sensitive components in the circuit. The device also conducts in response to transient voltage signals that are below the Breakdown Voltage (VBR), however, at VBR it begins to conduct more heavily, allowing more current to flow. As the transient voltage continues to increase, the device will eventually reach its maximum Safe Operating Region (SOAR), at which point the diode will conduct the maximum current.
The MXSMLJ13AE3/TR also features several types of protection characteristics such as High Temperature Operation (HTO). The device is designed to withstand temperatures up to 150°C, making it an ideal choice for high-temperature applications. Additionally, it offers enhanced thermal resistance, allowing it to remain cool even under extreme environmental conditions. The device also offers a variety of additional protection features such as Reverse Standoff (RSO) Voltage, Reverse Peak Pulse Current (RPC), and EMI/RFI filtering.
The MXSMLJ13AE3/TR TVS diode can be used to protect circuits from a variety of transient voltage signals. It offers a low-cost solution for protecting sensitive electronic components from ESD strikes and other transient voltage signals without sacrificing the performance of the system. It offers minimal capacitance and low inductance to ensure high-speed switching and higher data rates even in the most hostile ESD environments. Additionally, it offers several types of protection characteristics such as High Temperature Operation, Reverse Standoff Voltage, Reverse Peak Pulse Current, and EMI/RFI filtering, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MXSMBG2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXSMBG2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO215AA |
MXSMBG2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXSMBG2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO215... |
MXSMBG2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXSMBG2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO215AA |
MXSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMCJ5.0CA | Microsemi Co... | 15.34 $ | 3 | TVS DIODE 5V 9.2V DO214AB |
MXSMBJ100A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ100AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ10A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ10AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ110A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ110AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ11A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ11AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ120A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ120AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ12A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ12AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ130A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ130AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ13A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ13AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ14A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXSMBJ14AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL