MXSMLJ58A/TR Circuit Protection |
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Allicdata Part #: | MXSMLJ58A/TRMS-ND |
Manufacturer Part#: |
MXSMLJ58A/TR |
Price: | $ 11.50 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | HI REL TVS |
More Detail: | N/A |
DataSheet: | MXSMLJ58A/TR Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 10.45170 |
Series: | Military, MIL-PRF-19500 |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 58V |
Voltage - Breakdown (Min): | 64.4V |
Voltage - Clamping (Max) @ Ipp: | 93.6V |
Current - Peak Pulse (10/1000µs): | 32A |
Power - Peak Pulse: | 3000W (3kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | SMLJ (DO-214AB) |
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TVS - Diodes
TVS-Diodes are an essential component in the protection of electrical and electronic circuits in many applications. They are designed to provide transient protection for sensitive electronic components from incoming to high voltage transients and surges. The MXSMLJ58A/TR is a silicon-based, unidirectional, low capacitance Transient Voltage Suppressor (TVS) diode for Transient Voltage Suppression (TVS).
Application Field
The MXSMLJ58A/TR can be used in various applications including prototypes, computer and systems and general purpose protection, continuous high- surge and high-temperature applications and power supply and motor control circuits. It is ideal for applications requiring low static drain-to-source breakdown voltage (VBR) as low as 5.8V. It can also be used as a ESD (electrostatic discharge) protection device. It provides reliable protection for electronic equipment connected to ESD-sensitive lines.
Working Principle
The MXSMLJ58A/TR voltage protector works using the principle of Zener diode action. It has a high breakdown voltage, which triggers the device into avalanche breakdown. This triggers a heavily doped region of opposite conductivity type in the diode, creating a conductive path that will quickly reduce high voltage transients and surges. This effectively limits the overvoltage and protects the sensitive electronic components.
The MXSMLJ58A/TR operates on a reverse bias, allowing it to offer fast response time with low leakage current. Its fast response time ensures that transient surges are quickly clamped, allowing elimination of noise and damages from overvoltage, thereby helping to protect the sensitive components in the circuit from any failure due to transient surges.
The low capacitance of the MXSMLJ58A/TR is especially beneficial to high-speed data lines, as it does not cause signal distortion from high-speed data signal interference. Furthermore, the low static drain-to-source breakdown voltage (VBR) allows for higher overvoltage protection.
Conclusion
The MXSMLJ58A/TR Transient Voltage Suppressor (TVS) diode is a silicon-based, unidirectional, low capacitance device for providing transient protection to circuits and sensitive electronic components from incoming voltage transients and surges. Its fast-responding action, low capacitance, and low static drain-to-source breakdown voltage make it the ideal solution for a range of applications from prototype testing to high-speed data lines.
The specific data is subject to PDF, and the above content is for reference
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