MXUPTB5E3 Circuit Protection |
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Allicdata Part #: | MXUPTB5E3-ND |
Manufacturer Part#: |
MXUPTB5E3 |
Price: | $ 13.94 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | MXUPTB5E3 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 12.66750 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS Compliant |
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TVS-Diodes are non-linear resistors designed to protect electronic circuits from voltage-induced damage, especially during electrical overstress (EOS) or Electrostatic Discharge (ED). The MXUPTB5E3 is a transient voltage suppressor, a specific type of TVS-Diode designed to protect against instantaneous high voltage spikes and transients. This article will cover the application field and working principle of the MXUPTB5E3.
The MXUPTB5E3 is a 6-pin surface mount (SMD) package TVS-Diode, designed for transient voltage suppression in low-voltage RF and microcontroller circuits. The low-capacitance package of the MXUPTB5E3 reduces switching time, while its adjustable clamp voltage makes the device suitable for a wide range of applications. The MXUPTB5E3 is rated for 5V operation in a -40°C to +125°C temperature range, and it provides Minimum Standoff Voltage (MSV) of 10V, Maximum Working Peak Reverse Voltage (PVWM) of 14V and Peak Pulse Power (P) of 1.35kW.
The working principle of the MXUPTB5E3 is based on the principle of avalanche breakdown. When exposed to a voltage above its VBR (voltage breakdown region), certain materials, such as silicon, start to conduct current, thus forming an avalanche breakdown. This is known as avalanche multiplication and is the principal mechanism on which operation of the MXUPTB5E3 is based. The MXUPTB5E3 starts to conduct when the voltage increases above its VBR. This causes the current flowing through the device to exponentially increase, which suppresses the voltage spike and transient.
The MXUPTB5E3 is used in a wide range of applications, including industrial control systems, low-voltage RF systems, automotive and military applications, telecom and networks, automotive board-level ESD protection, and general-purpose ESD protection. The most common application of the MXUPTB5E3 is in the protection of low-voltage RF circuits from voltage spikes and transients.
The device can be used in several ways to protect circuits. The most common use is in the form of a protective clamp, as the rapidly increasing current acts as a clamp suppressing voltage spikes and transients. The MXUPTB5E3 can also be used as an ESD protection device, as it reduces the amount of energy supplied to the circuit and limits the current through the circuit to a safe level. Finally, the MXUPTB5E3 can also be used as part of a controlling voltage circuit, as the device protects the circuit from accidental overvoltage.
In summary, the MXUPTB5E3 is a 6-pin SMD package TVS-Diode used for transient voltage suppression in low-voltage RF and microcontroller circuits. Its Avalanche breakdown principle of operation allows it to be used as a protective clamp, an ESD protection device or a controlling voltage circuit. The device is highly versatile and is used in a wide range of applications such as industrial control systems, low-voltage RF systems, automotive and military applications, telecom and networks, automotive board-level ESD protection, and general-purpose ESD protection.
The specific data is subject to PDF, and the above content is for reference
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MXUPT8 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPT8E3 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB10 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB10E3 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB12 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB12E3 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB15 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
MXUPTB15E3 | Microsemi Co... | 13.94 $ | 1000 | TVS DIODE |
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