02013K1R0BBSTR Allicdata Electronics
Allicdata Part #:

02013K1R0BBSTR-ND

Manufacturer Part#:

02013K1R0BBSTR

Price: $ 0.09
Product Category:

Capacitors

Manufacturer: AVX Corporation
Short Description: CAP THIN FILM 1PF 25V 0201
More Detail: 1pF Thin Film Capacitor 25V 0201 (0603 Metric)
DataSheet: 02013K1R0BBSTR datasheet02013K1R0BBSTR Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
5000 +: $ 0.07425
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: Accu-P®
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 1pF
Tolerance: ±0.1pF
Voltage - Rated: 25V
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Operating Temperature: -55°C ~ 125°C
Features: RF, High Q, Low Loss
Size / Dimension: 0.024" L x 0.013" W (0.60mm x 0.33mm)
Height - Seated (Max): 0.011" (0.28mm)
Description

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Thin film capacitors are essential components of many electronic and electrical devices. They provide the electrical storage needed to make electronic and electrical systems work. This type of capacitor is usually formed by depositing a thin film of dielectric material on a substrate and is typically used in applications such as power supplies, switching power supplies, and many other high frequency applications.

The 02013K1ROBBSTR is a type of Thin Film Capacitor developed by Toshiba Corporation and is designed to be used in applications where high frequency and large capacitance are needed. This type of capacitor features a small form factor, a low equivalent series resistance (ESR), and a low current leakage. It is typically used in applications where small size and high frequency are needed, such as switching power supplies, power supplies, and power conditioning.

The 02013K1ROBBSTR is constructed using a high-performance dielectric and aluminum electrodes. The dielectric layer is made up of BaTiO3 (Barium Titanium Oxide), which has a dielectric constant of approximately 1800, and is then deposited onto a ceramic substrate. The aluminum electrodes are then patterned onto the dielectric layer. The use of aluminum electrodes ensures low equivalent series resistance (ESR). The 02013K1ROBBSTR also features a low current leakage due to the high dielectric constant and its design.

The working principle for the 02013K1ROBBSTR is the same as for all Thin Film Capacitors. When an electrical potential is applied to the capacitor, electrons are stored on the metal electrodes and the dielectric material creates an electrical field. This field stores energy which can then be released when the capacitor is discharged. The amount of energy stored depends on the size of the capacitor and the type of dielectric material used.

The 02013K1ROBBSTR is primarily used in applications where small size and high frequency are needed. These applications include switching power supplies, power supplies, and power conditioning. The 02013K1ROBBSTR is designed to deliver high capacitance, low equivalent series resistance (ESR), and low current leakage, making it ideal for a wide range of electronic and electrical applications.

The 02013K1ROBBSTR is a highly reliable component, with a long life and low maintenance requirements. Its small size and high performance make it an ideal choice for many applications. It is currently used in a variety of industries, including telecommunications, automotive, aerospace, and medical.

Thin film capacitors have become increasingly popular due to their small size, high performance, and long life. The 02013K1OBSERV is a prime example of the excellent capabilities of Thin Film Capacitors, providing simultaneous high capacitance, low ESR, and low power leakage for applications where small size and high frequency are needed.

The specific data is subject to PDF, and the above content is for reference

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