TH3A474K025C8500

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Tantalum capacitors (also known as “tantalum electrolytic capacitors”) are composed of two thin electrodes that are separated by a tantalum oxide. The oxide layer acts as an insulating dielectric that stores energy by forming an electric field in between the two electrodes. The two electrodes are usually made from tantalum foil and are coated with an oxide material. The oxide material can be either manganese dioxide, or chemically modified using aluminum oxide.

The TH3A474K025C8500 is a tantalum capacitor of the radial leaded surface-mount type, which has a high capacitance to volume ratio and can handle high temperature, up to 125 degrees Celsius. The device features a 4.7 uF capacitance at 10 V, with a tolerance of ±20%.

The application field of the TH3A474K025C8500 capacitor is very wide and includes power supply, high frequency circuits, DC blocking, frequency separation, and decoupling circuits. The device is also well suited for high temperature and high voltage applications in automotive and other industrial equipment.

The working principle of the TH3A474K025C8500 capacitor is based on its electrode structure. The two electrodes are separated by a thin layer of tantalum oxide. The oxide layer acts as a dielectric and allows for the buildup of an electric field between the two electrodes. The electric field stores the energy required to charge and discharge the capacitor.

When the capacitor is connected in a circuit, the two electrodes are exposed to a voltage. The voltage causes electrons to flow between the electrodes via quantum tunneling. This causes the capacitors to charge and discharge with each cycle. The amount of charge and discharge depends on the size of the capacitor and the amount of voltage applied.

The TH3A474K025C8500 is a very useful device and can be found in many electronic circuits. The device is ideal for high temperature and high voltage applications and its high capacitance to volume ratio makes it a good choice for use in power supply, high frequency, DC blocking, frequency separation, and decoupling circuits.

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