CWR26HB226MCGZ\PR Allicdata Electronics
Allicdata Part #:

CWR26HB226MCGZ\PR-ND

Manufacturer Part#:

CWR26HB226MCGZ\PR

Price: $ 15.02
Product Category:

Capacitors

Manufacturer: Vishay Sprague
Short Description: CAP TANT 22UF 20% 15V 2711
More Detail: 22µF Conformal Coated Tantalum Capacitors 15V 2711...
DataSheet: CWR26HB226MCGZ\PR datasheetCWR26HB226MCGZ\PR Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100 +: $ 13.65450
Stock 1000Can Ship Immediately
$ 15.02
Specifications
Series: Military, MIL-PRF-55365/13, CWR26
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 22µF
Tolerance: ±20%
Voltage - Rated: 15V
Type: Conformal Coated
ESR (Equivalent Series Resistance): 275 mOhm
Operating Temperature: -55°C ~ 125°C
Lifetime @ Temp.: --
Mounting Type: Surface Mount
Package / Case: 2711 (6728 Metric)
Size / Dimension: 0.265" L x 0.110" W (6.73mm x 2.79mm)
Height - Seated (Max): 0.125" (3.17mm)
Lead Spacing: --
Manufacturer Size Code: G
Features: Military
Failure Rate: C (0.01%)
Description

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Tantalum capacitors are widely used for circuit components in a range of electronic applications due to their high capacitance, small size and reliability. A CWR26HB226MCGZ tantalum capacitor is a surface mount capacitor used for circuit components in the form of an upright cylinder package with two leads. The use of a smaller capacitor allows for a higher capacitance than can be achieved with a larger ceramic capacitor.

The construction of the CWR26HB226MCGZ tantalum capacitor comprises of a sintered tantalum anode as the base material on which two layers are built. The outermost layer of other tantalum pentoxide forms the dielectric while the inner layer is a paste of manganese dioxide. This paste is then surrounded by a thin layer of polymer and tin. This is then sealed in the metalized sheet to make the casing.

The CWR26HB226MCGZ tantalum capacitor has a capacitance of 2.2 microfarads with a voltage rating of 6.3 volts. The working principle of the capacitor is based on the buildup and release of electrical charge. When a voltage is applied to the lead of the capacitor, an electric current flows between the anode and cathode, resulting in charge accumulation on the anode. The charge buildup in the anode builds up a potential difference that is equal to the applied voltage. Thus, a capacitance is created.

In the CWR26HB226MCGZ tantalum capacitor, this capacitance is produced by the accumulation of electrons that accumulate on the anode and the release of these electrons when the capacitor is discharged. This process is much quicker and occurs at a lower voltage than other types of electrolytic capacitors such as aluminum electrolytic capacitors. The CWR26HB226MCGZ tantalum capacitor has high frequency characteristics due to its small size and allows the circuit to be designed to handle higher frequencies than those possible with a larger capacitor. Its anode also allows a lower ESR than other types of capacitors.

The CWR26HB226MCGZ tantalum capacitor is used in many diverse and unspecified applications including filtering, timing, bypassing and decoupling applications. It is also used for clock oscillator circuits, signal attenuation, memory chips and other digital circuits that require the use of low and high frequency pulses. It is also used as an energy-storing device in many applications as it can handle high-current pulses.

In summary, the CWR26HB226MCGZ tantalum capacitor is a high quality surface mount capacitor used for a range of electronic applications due to its compact size, reliability and high capacitance. It can be used for filtering, bypassing, decoupling and timing applications and is also used for energy-storing devices. The working principle of the capacitor is based on the buildup of electrical charge in the anode that creates a potential difference equal to the applied voltage thus forming the capacitance.

The specific data is subject to PDF, and the above content is for reference

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