PE64102B-Z RF/IF and RFID |
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Allicdata Part #: | 1046-1066-2-ND |
Manufacturer Part#: |
PE64102B-Z |
Price: | $ 0.43 |
Product Category: | RF/IF and RFID |
Manufacturer: | pSemi |
Short Description: | RF DTC 100MHZ-3GHZ 12QFN |
More Detail: | RF IC Digitally Tunable Capacitor General Purpose ... |
DataSheet: | PE64102B-Z Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.39690 |
6000 +: | $ 0.37800 |
15000 +: | $ 0.37044 |
Series: | UltraCMOS®, DuNE™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Function: | Digitally Tunable Capacitor |
Frequency: | 100MHz ~ 3GHz |
RF Type: | General Purpose |
Secondary Attributes: | SPI Interface |
Package / Case: | 12-UFQFN Exposed Pad |
Supplier Device Package: | 12-QFN (2x2) |
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RF misc ICs and modules are components commonly used in telecommunications technology and radio frequency applications. The PE64102B-Z is a component used in these applications. It is an Integrated Circuit (IC) designed for Radio Frequency (RF) amplification. It is a dual variable gain amplifier that gives its users adjustable gain linearity. It is manufactured by P-E and has a frequency range of DC – 7GHz.
The PE64102B-Z application field covers the entire communications system, from embedded systems to full coverage. It can be used for applications in antenna systems, digital voice and data systems, digital mobile radio systems, cable head-end systems and satellite mobile systems. Furthermore, it provides reliable performance and low noise figure for rear WLAN systems.
The working principle of the PE64102B-Z is based on the following three factors. Firstly, it is a two-stage amplifier with a noise figure of 7-8 dB. Secondly, the sample rate of the unit can reach up to 10 million samples per second. Lastly, the gain of the amplifier is adjustable and can be set between 5 dB and 30 dB.
The first stage of the amplifier consists of two transistors. These transistors have very low intermodulation distortion for better linearity and noise performance. The second stage is a low-noise amplifier that uses a combination of Schottky and bipolar transistors to achieve high gain without inducing any additional noise. The subsequent inputs and outputs, along with the adjustable gain, make the device suitable for use in a variety of RF applications.
The adjustable gain of the PE64102B-Z is provided by an independent reference voltage which is used to control the base drive of the transistors. The base drive is produced by a voltage-controlled resistor. This resistor is connected to the negative bias voltage and is used to adjust the gain of the amplifier. The gain of the amplifier can be adjusted to a maximum of 30 dB. This feature makes the IC suitable for applications where adjustable gain is required.
The PE64102B-Z is designed to perform at high frequencies with minimal distortion and noise. The gain of the amplifier is linear and stable over the entire frequency range of operation. The device has a low insertion loss, making it very efficient. Additionally, it has a high OIP3 rating, which makes it suitable for high-power applications.
The PE64102B-Z is an extremely reliable and efficient RF amplifier with a wide range of applications. It is designed for use in a variety of RF communication systems and provides a low noise figure with adjustable gain linearity. The adjustable gain feature makes the IC suitable for applications where variable gain is required. The device is manufactured by P-E with a frequency range of DC – 7GHz and is suitable for use in antenna systems, digital voice and data systems, digital mobile radio systems, cable head-end systems and satellite mobile systems.
The specific data is subject to PDF, and the above content is for reference
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