HMC952ALP5GE Allicdata Electronics
Allicdata Part #:

1127-3364-ND

Manufacturer Part#:

HMC952ALP5GE

Price: $ 197.01
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC AMP 2W 24QFNRF Amplifier IC  9GHz ~ 1...
More Detail: N/A
DataSheet: HMC952ALP5GE datasheetHMC952ALP5GE Datasheet/PDF
Quantity: 45
Lead Free Status / RoHS Status:
Moisture Sensitivity Level (MSL):
1 +: $ 197.01000
Stock 45Can Ship Immediately
$ 197.01
Specifications
Series: --
Packaging: Cut Strip
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Frequency: 9GHz ~ 14GHz
P1dB: 34dBm
Gain: 33dB
Noise Figure: --
RF Type: --
Voltage - Supply: 6V
Current - Supply: 1.4A
Test Frequency: 10GHz ~ 14GHz
Package / Case: 24-VQFN Exposed Pad
Base Part Number: HMC952
Supplier Device Package: 24-QFN (5x5)
Description

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RF amplifiers are a type of electronic component that boost electric signals in electronic devices to facilitate better and reliable performance. A common RF amplifier used in a variety of applications is the HMC952ALP5GE, a high performance power amplifier. The following article will discuss the application fields and working principle of the HMC952ALP5GE.

Description of HMC952ALP5GE

The HMC952ALP5GE is a type of broadband power amplifier that is based on GaN on SiC HEMT (high electron mobility transistor) technology. This amplifier is suited for many different high power and linear applications, such as satellite communication networks, 4G/LTE networks, point-to-point systems, VSAT systems, commercial Wi-Fi networks, wireless base station systems, location tracking, and VSAT systems. The amplifier is designed to operate over a wide range of frequencies from 4 to 8.5 GHz, delivering a peak output of 45dBm with a high gain of over 16 dB. It is equipped with a number of high dynamic range features, such as a wide bandwidth, low distortion, and low noise behavior.

Application Fields for HMC952ALP5GE

The HMC952ALP5GE is suitable for a range of wireless and satellite applications. The peak output power of 45dBm makes it suitable for long range communication systems such as 4G/LTE base station systems, VSAT systems, and wireless mobile networks. It is also suitable for tracking applications, as its wide range of frequency capabilities allow it to track a range of different RF signals. Additionally, its excellent linearity and low noise make it suitable for Wi-Fi networks. It is also well suited for low voltage base station operations, as its high efficiency helps to reduce power consumption.

Working Principle of HMC952ALP5GE

The HMC952ALP5GE uses a high electron mobility transistor (HEMT) technology to amplify radio frequency (RF) signals. HEMT is an advanced transistor technology that uses a thin-film layer of gallium nitride (GaN) on silicon carbide (SiC) to create a high electron mobility transistor (HEMT), which is a transistor used to amplify or switch electronic signals. The HMC952ALP5GE is designed such that the impedance of the input signal is automatically matched to the transistor, allowing for a high gain and linear operation. The amplifier also includes an input matching circuit which reduces distortion and increases the linearity of the signal. Additionally, the amplifier is equipped with an integrated temperature sensor which helps to monitor the temperature of the amplifier and adjust the gain accordingly.

Conclusion

The HMC952ALP5GE is a high-performance power amplifier that is capable of providing a peak output of 45 dBm with excellent linearity and low noise. Its wide range of frequency capabilities, low voltage base station capability, low distortion behavior, and integrated temperature sensor make it well suited for a range of wireless and satellite applications. The technology behind it, HEMT, helps to improve the signal properties of the amplifier and allows for a high gain and linear operation. The HMC952ALP5GE is thus a versatile and reliable RF amplifier that is suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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