FM24V10-G Allicdata Electronics
Allicdata Part #:

428-3197-ND

Manufacturer Part#:

FM24V10-G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 1M I2C 3.4MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) ...
DataSheet: FM24V10-G datasheetFM24V10-G Datasheet/PDF
Quantity: 4331
Stock 4331Can Ship Immediately
Specifications
Series: F-RAM™
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (128K x 8)
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: --
Access Time: 130ns
Memory Interface: I²C
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: FM24V10
Description

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The FM24V10-G is a low-power, 10-megabit electrically erasable programmable read-only memory (EEPROM) device from Fujitsu. It is commonly used in applications that require low-power, reliable data storage, such as digital cameras, medical devices, computer equipment and other embedded systems. The device has several unique features such as accelerated write and read speeds, advanced low-voltage detection, sector erase capability and more.

Application Fields

The FM24V10-G has been designed to meet the requirements of a wide range of applications, including automotive electronic systems, communication systems, portable electronic devices, mobile handsets and industrial control systems. The device is ideal for applications that require low-power consumption, low-voltage operation, small footprint and high reliability. It is also suitable for applications that require write and erase commands to be carried out in an accelerated manner and that require memory content to be protected in an emergency.

Working Principle

The operating principle of the FM24V10-G is based on two main elements, the EEPROM cell array and the EPROM control logic. The EEPROM cell array consists of 10 megabits of single-bit registers that are organized in blocks of 64 kilobits (Kb). The memory is constructed in an array that is divided into an upper and lower half. Each half can be individually programmed and erased. The EPROM control logic provides the necessary timing and control signals to the EEPROM cell array and the external interface used to communicate with the host device.

The EPROM control logic uses a variety of techniques to detect and recover from memory errors. It uses advanced error checking and correction techniques to detect and correct single-bit errors, and error detection and correction (EDC) algorithms to detect double-bit errors. Error detection is carried out using cyclic redundancy check (CRC) codes, which are also used to verify the integrity of read operations.

The FM24V10-G is designed to operate over a wide range of temperatures and is equipped with advanced low-voltage detection technology. The device is protected from voltage peaks and over-voltage conditions and can operate over the extended temperature range of -40°C to +125°C. Additionally, the device utilizes advanced low-power sleep modes to reduce current consumption.

Conclusion

The FM24V10-G is a 10-megabit low-power EEPROM device from Fujitsu that is optimized for use in a wide range of embedded systems, automotive electronics, portable devices and more. The device has several unique features such as accelerated write and read speeds, advanced low-voltage detection, sector erase capability and more. It is designed to operate over a wide range of temperatures and can protect the data stored in it from voltage peaks and over-voltage conditions. The combination of these features makes the FM24V10-G the ideal memory device for any low-power, reliable data storage application.

The specific data is subject to PDF, and the above content is for reference

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