AS4C32M16SB-7TCN

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM
Memory Size:	512Mb (32M x 16)
Clock Frequency:	143MHz
Write Cycle Time - Word, Page:	14ns
Access Time:	5.4ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	54-TSOP II

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Introduction

AS4C32M16SB-7TCN is a high-density and high-performance double-data-rate dynamic random access memory (DDR DRAM) device. It is designed to provide superior performance in a variety of memory applications such as high-end servers and workstations. This memory device is capable of delivering up to 32 megabytes of data transfer per second, using low power and minimal number of pins. This makes AS4C32M16SB-7TCN suitable for applications which require quick access and transfer of large amounts of data.

Applications of AS4C32M16SB-7TCN

The AS4C32M16SB-7TCN memory device can be used in various types of applications including computer systems, networking and telecommunications, digital imaging, industrial control and data acquisition, aerospace and defence, automotive and mobile wireless devices. The device offers a number of features which make it highly suitable for these applications. In computer systems, AS4C32M16SB-7TCN is suitable for a variety of systems such as notebook/laptop PCs, desktop PCs, server systems, embedded systems, enterprise computing and gaming systems. The device offers a high degree of data throughput and low power consumption, making it ideal for a variety of applications.In the networking and telecommunications industry, the device is suitable for use in routers, switches, base stations, network interface cards (NICs), switches, hubs and other related equipment. The high throughput of the memory device, along with its low power consumption and high number of pins, makes it an ideal choice for high-end networking and telecommunications equipment.The device is also suitable for digital imaging applications. It is ideal for digital video (DV) cameras, digital video recorders (DVRs), digital photo frames and other imaging systems which require quick data transfer and low power consumption.The industrial control and data acquisition industry is also a suitable application for AS4C32M16SB-7TCN. The device is suitable for process control and data acquisition systems which require high data throughput and low power consumption.In the aerospace and defence field, the device can be used in communication systems and navigation systems. In navigation systems, the memory device’s high throughput and low power consumption makes it suitable for high accuracy and reliability.In the automotive and mobile wireless device industry, the device is suitable for use in vehicles, as well as in mobile phones, PDAs and other handheld devices. The memory device’s low power consumption and high throughput makes it suitable for these applications.

Features of AS4C32M16SB-7TCN

AS4C32M16SB-7TCN memory device offers a number of features which make it highly suitable for its range of applications. These features include: • High-density memory cells – The device offers up to 32 megabytes of data transfer per second, making it ideal for applications which require quick data access and transfer.• Low power consumption – The device offers low power consumption of only 1.5V, making it suitable for applications which require minimal power consumption. • Low operating temperature — The device operates at temperatures between 0 and 70 degrees Celsius, making it suitable for a wide range of temperature-sensitive applications. • Low number of pins – The device requires only 8 pins for operation, making it suitable for embedded systems.• High data transfer speed – The device is capable of providing up to 32 megabytes of data transfer per second, making it highly suitable for applications which require fast data transfer.• High endurance – The device is highly durable and can withstand a high number of write cycles, making it highly reliable for its range of applications.• Low latency – The device offers low data latency, making it suitable for applications which require quick data access.

Working Principle of AS4C32M16SB-7TCN

AS4C32M16SB-7TCN is a DDR DRAM device, meaning it is a double-data-rate synchronous dynamic random-access memory. The device bundles data into two parts, referred to as “READ” and “WRITE” packets. The data is sent to and from the device twice as fast as with single-data-rate DRAMs. The DDR DRAM is able to almost double its data rate, from 133 MHz to 266 MHz, by using a clock twice as fast.The device comprises of two components, an array of DRAM cells (the “core”) and a digital peripheral (the “controller”). The core stores data and the controller reads and writes the data. The controller consists of an address decoder, a data input/output, a common data I/O, a row decoder, a column decoder and control logic. The operation of the memory device follows a specific sequence. Before data can be written or read, the device must be precharged. This sets all cells to a knowndefault state. The decoders and control logic then read the address and activate the desired word line and column, allowing it to transmit and receive data. The device coordinates all of its functions using a clock. This clock signals the device to enter write or read cycles. Once the desired data has been written or read, the device must be precharged again to return the cells to their default state. This cycle is repeated for every data transfer to and from the device.

Conclusion

AS4C32M16SB-7TCN is a high-density and high-performance double-data-rate memory device. This memory device can be used in a variety of applications, including computer systems, networking and telecommunications, digital imaging, industrial control and data acquisition and aerospace and defence. The device has a number of features which make it suitable for these applications, such as low power consumption, low operating temperature, low latency and high data transfer speeds. The device works by precharging cells to a known default state and then transferring and receiving data using address and control logic.

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