FM25V05-G

Series:	F-RAM™
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FRAM
Technology:	FRAM (Ferroelectric RAM)
Memory Size:	512Kb (64K x 8)
Clock Frequency:	40MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	SPI
Voltage - Supply:	2 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Base Part Number:	FM25V05

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FM25V05-G application field and working principle

Introduction

The FM25V05-G is a non-volatile static random access memory (nvSRAM) designed and manufactured by RAMTRON. It is a part of their Ferroelectric Random Access Memory (FeRAM) family, and offers an effective solution to applications where data retention is essential without sacrificing power consumption. Its operation is based on the dielectric constant of ferroelectric thin films, and offers two operation modes: static random access memory mode and non-volatile data storage mode.

Application

The FM25V05-G is designed to fit a wide variety of applications such as battery-powered devices and real-time data recorders. It is especially suitable for use in applications requiring low power consumption due to its low standby power consumption. Other applications include secure authentication, data logging, and semiconductor memory testing and verification.

Features

The device offers several features that set it apart from conventional nvSRAMs. It is available in a 32-pin SOIC package and provides five address bits via an I2C/SMBus compatible serial interface. Addressability and data path width of the device are configurable with an on-board jumper selectable via SPI or I2C communication. The device has a 32 kHz oscillator which can be used to provide the timing clock for the I2C/SMBus interface. It also has an on-board voltage supervisor which can be configured to generate a RESET signal when the voltage supplied to the device falls below the preset threshold. The memory can store up to 8 Kbit of data (2 K bit of programmable non-volatile data and 6 K bit of volatile SRAM data) which is organized into two equal-sized sectors. Data written to the non-volatile portion of the memory is retained even when the power supply is removed. The device also offers up to eight write protection modes for the non-volatile section, and supports the I2C multi-master protocol for communication.

Working Principle

The working principle of the FM25V05-G is based on the use of ferroelectric thin films. The ferroelectric thin film layers, along with the electrodes, form a capacitor which stores electrical charge. When the voltage is applied, electrons and ions migrate in opposite directions and create a dipole moment. This dipole moment is responsible for the memory effect of the device. The write/erase operations in the non-volatile section of the memory are done by providing appropriate voltage across the two electrodes of the capacitor. The SRAM portion of the memory is organized into two sectors of 512 bytes each. The first sector is the non-volatile portion which can store up to 2 Kbit of data, while the second sector is the volatile portion which can store up to 6 Kbit of data. The SRAM is accessed via an I2C/SMBus compatible serial interface. The FM25V05-G is a low power consuming device with a standby mode current of less than 800nA. Its wide operating voltage range, from 2.7V to 5.5V, and extended temperature range from -40°C to +125°C make it suitable for a variety of applications.

Conclusion

The FM25V05-G is a non-volatile static random access memory designed and manufactured by RAMTRON. Its operation is based on the dielectric constant of ferroelectric thin films and offers two operation modes: static random access memory mode and non-volatile data storage mode. The device is ideal for applications where data retention is essential without sacrificing power consumption, such as battery-powered devices, real-time data recorders and secure authentication. It offers several features, including a 32 kHz internal oscillator, up to 8 Kbit of data retention, five address bits, and up to eight write protection modes.

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