Allicdata Part #: | 428-3835-ND |
Manufacturer Part#: |
CY7C1061G30-10ZSXI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 16M PARALLEL 54TSOP |
More Detail: | SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral... |
DataSheet: | CY7C1061G30-10ZSXI Datasheet/PDF |
Quantity: | 559 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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The CY7C1061G30-10ZSXI is a Complementary Metal Oxide Semiconductor (CMOS) Static Random Access Memory (SRAM) integrated circuit (IC). It is a type of memory used for storing information and can be found in a variety of applications such as industrial automation, communications, consumer electronics, and automotive.
The CY7C1061G30-10ZSXI is a high-density, low-power SRAM IC with a total memory capacity of 1 megabit. It features a single 3.3V supply voltage, a wide temperature range, a simple, asynchronous interface, and fast access times. The device also features an embedded self-test, ensuring code integrity in applications such as industrial automation.
The CY7C1061G30-10ZSXI has a wide range of applications and can be found in a variety of products including cell phones, industrial automation equipment, automotive systems, and consumer electronics. It is used for storing data in industrial automation equipment, enabling dynamic response and control, and has a low power consumption, making it ideal for battery operated devices. The device is also used for storing code, such as in cell phones, providing reliability and code integrity.
The working principle of the CY7C1061G30-10ZSXI is based on the concept of static random access memory (SRAM). SRAM is a type of memory that stores information without the need for refreshing it and is faster than other types of memory such as dynamic random access memory (DRAM). In SRAM, each cell consists of four transistors: two transistors store a bit of data, and two transistors shift the data either to the left or to the right depending on the logic state. This allows for fast, non-volatile storage of data.
The CY7C1061G30-10ZSXI also includes an embedded self-test, ensuring code integrity in applications such as industrial automation. The self-test ensures the code in the device has not been tampered with, making it reliable and secure.
In summary, the CY7C1061G30-10ZSXI is a high-density, low-power SRAM IC with a total memory capacity of 1 megabit. It is used for storing data in industrial automation equipment and other applications, has a low power consumption, and features an embedded self-test. The working principle of the device is based on the concept of static random access memory (SRAM), and it ensures code integrity in applications.
The specific data is subject to PDF, and the above content is for reference
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