AS4C4M32D1A-5BIN

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Memory

AS4C4M32D1A-5BIN is a low-power, low-voltage static random access memory (SRAM) module. It has a 4Mbit storage capacity, and a data bus width of 32 bits. It has a typical supply voltage of 1.5V.

The AS4C4M32D1A-5BIN is most commonly used in embedded applications, where low power consumption and reliable operation is essential such as consumer electronics and medical devices. It has a low ICC current consumption, and can operate in a wide range of temperatures from 0°C to 70°C.

The SRAM module has an access time of 5 ns, which is suitable for high performance embedded applications. It also has a high endurance and reliability, making it an ideal choice for mission critical applications. It is available in a variety of packages such as TSSOP-32, VFBGA-48, and QFN-48.

The AS4C4M32D1A-5BIN SRAM module works using static charge storage cells on a silicon die. It uses a series of bi-stable flip-flops with gates to control the storage of data. When the control signals go high, the gates open allowing data to be written into the memory cells. When the control signals go low, the gates close and the data is stored in the memory cells.

The module uses a single +1.5V power supply and has an active current consumption of 10.5mA. It has an operating frequency of 50MHz and has a standby current of 30µA.

Overall, the AS4C4M32D1A-5BIN SRAM module is an ideal choice for embedded applications where power consumption and reliability are key considerations. With its wide operating temperature range, low power consumption, and high endurance and reliability, it is suitable for a variety of mission critical applications.

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