AS4C64M8D2-25BIN Allicdata Electronics
Allicdata Part #:

1450-1129-ND

Manufacturer Part#:

AS4C64M8D2-25BIN

Price: $ 3.85
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 60FBGA
More Detail: SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 40...
DataSheet: AS4C64M8D2-25BIN datasheetAS4C64M8D2-25BIN Datasheet/PDF
Quantity: 241
1 +: $ 3.49650
10 +: $ 3.18780
25 +: $ 3.12732
50 +: $ 3.10590
100 +: $ 2.78624
264 +: $ 2.77554
528 +: $ 2.60227
1056 +: $ 2.49154
Stock 241Can Ship Immediately
$ 3.85
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)
Description

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Memory

The AS4C64M8D2-25BIN memory type is one of the most commonly used in the industry today. It is a low-cost, highly integrated, low power, dual-bank, parallel access, 4-bit dram device that offers outstanding performance for a wide range of applications. It is an ideal choice for memory-intensive embedded systems, such as the latest embedded applications.

The AS4C64M8D2-25BIN is a synchronous, dynamic random access memory (DRAM) device. Its low-to-medium density makes it suitable for a variety of applications, including storage of data registers in automation systems, as well as digital audio and video memory.

The AS4C64M8D2-25BIN is a dual-bank memory device, meaning it supports two distinct banks of dynamic RAM (DRAM) partitions within the same device. Each bank has its own independent column and row address bus, as well as its own independent address and data registers, which allow for simultaneous fetching and writing of two distinct memory partitions.

The AS4C64M8D2-25BIN is designed to offer high speed and flexibility for embedded applications. It has a fast 25MHz clock speed and offers up to 91Mbps in burst mode. It is also highly configurable, with multiple CAS latency settings to adjust the overall performance to meet the needs of the application.

The AS4C64M8D2-25BIN supports two distinct operating modes: single-bank and dual-bank. In single-bank mode, both banks are used as a single contiguous DRAM, offering a maximum capacity of 64MBytes. In dual-bank mode, each bank is used individually, offering a maximum of 32MBytes per bank. The device also supports error correction and detection, offering improved reliability and data integrity.

The AS4C64M8D2-25BIN also supports a variety of timing modes, including Page Mode, Refresh Mode, and Mixed Mode. Page Mode allows applications to quickly access a continuous series of instructions or data. Refresh Mode enables the device to complete periodic refresh cycles to keep its contents current. The Mixed Mode combines both Page Mode and Refresh Mode in order to maximize throughput.

Finally, the AS4C64M8D2-25BIN has excellent power management capabilities. It has a power down mode to conserve power when not in use, as well as a low power mode for when system performance is not a priority. This enables the device to maximize battery life and reduce power consumption in handheld systems.

Overall, the AS4C64M8D2-25BIN is a versatile, highly integrated, and cost-effective memory device for embedded applications. Its combination of fast clock speed, configurable CAS latency, and power management capabilities makes it an ideal choice for storage and data manipulation in embedded systems.

The specific data is subject to PDF, and the above content is for reference

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