Allicdata Part #: | 428-4147-ND |
Manufacturer Part#: |
CY62126EV30LL-55BVXE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 1M PARALLEL 48VFBGA |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral... |
DataSheet: | CY62126EV30LL-55BVXE Datasheet/PDF |
Quantity: | 960 |
Series: | MoBL® |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (64K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-VFBGA (6x8) |
Base Part Number: | CY62126 |
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The CY62126EV30LL-55BVXE is a type of high-speed static random access memory (SRAM) that is used for consumer, automotive and industrial applications. It is manufactured by Cypress Semiconductor and is available in a variety of densities and package sizes. The CY62126EV30LL-55BVXE has a high-speed access time of 55 ns, a clock rate of 66 MHz, and is designed to operate with 3.3V of power. It is also compatible with a wide range of other voltages.
The CY62126EV30LL-55BVXE is suitable for a variety of consumer, automotive and industrial applications such as powertrain, advanced driver-assistance systems (ADAS), gateway, networking, aerospace and defense, and IoT. It can be used in applications where low-power consumption is important, as the CY62126EV30LL-55BVXE is deigned to minimize power consumption in standby and operating modes.
The CY62126EV30LL-55BVXE is a type of synchronous SRAM. In a synchronous SRAM, accesses to memory cells are coordinated by a clock signal. When enabled, the clock signal activates the address transistors, allowing the desired address to be accessed, or written. When the clock is disabled, the transistors open, preventing access or writing to other cells in the memory array.
The CY62126EV30LL-55BVXE utilizes a pseudo-static architecture and dual-port RAM structure, allowing two independent ports to separately access the same array of cells. This allows different tasks to be completed at the same time. The dual-port architecture also allows for fast communication between devices connected to the same port.
In addition, the CY62126EV30LL-55BVXE has error checking and correction (ECC) and refresh capabilities to ensure reliable operation in harsh environments. The CY62126EV30LL-55BVXE also features a four-state output, which is ideal for multiple data transmission and reception applications.
The CY62126EV30LL-55BVXE is ideal for a variety of applications due to its combination of high performance, low power consumption, and reliability. It is well-suited for high-reliability and high-availability applications, and is equipped to handle a range of interface, protocol and power requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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CY62128EV30LL-55ZXE | Cypress Semi... | 4.01 $ | 39 | IC SRAM 1M PARALLEL 32TSO... |
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CY62148G30-45SXI | Cypress Semi... | 4.77 $ | 93 | IC SRAM 4M PARALLEL 32SOI... |
CY62158EV30LL-45BVXI | Cypress Semi... | -- | 75 | IC SRAM 8M PARALLEL 48VFB... |
CY62138FV30LL-45ZAXA | Cypress Semi... | 4.87 $ | 70 | IC SRAM 2M PARALLEL 32STS... |
CY62148EV30LL-55ZSXE | Cypress Semi... | 5.48 $ | 36 | IC SRAM 4M PARALLEL 32TSO... |
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CY62147G30-45ZSXI | Cypress Semi... | -- | 135 | IC SRAM 4M PARALLEL 44TSO... |
CY62147G-45ZSXI | Cypress Semi... | 4.73 $ | 110 | IC SRAM 4M PARALLEL 44TSO... |
CY62146G-45ZSXI | Cypress Semi... | 4.77 $ | 105 | IC SRAM 4M PARALLEL 44TSO... |
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CY62147GE18-55ZSXI | Cypress Semi... | 4.8 $ | 105 | IC SRAM 4M PARALLEL 44TSO... |
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CY62146EV30LL-45BVXIT | Cypress Semi... | -- | 1000 | IC SRAM 4M PARALLEL 48VFB... |
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