CY62126EV30LL-55BVXE Allicdata Electronics
Allicdata Part #:

428-4147-ND

Manufacturer Part#:

CY62126EV30LL-55BVXE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 48VFBGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: CY62126EV30LL-55BVXE datasheetCY62126EV30LL-55BVXE Datasheet/PDF
Quantity: 960
Stock 960Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)
Base Part Number: CY62126
Description

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The CY62126EV30LL-55BVXE is a type of high-speed static random access memory (SRAM) that is used for consumer, automotive and industrial applications. It is manufactured by Cypress Semiconductor and is available in a variety of densities and package sizes. The CY62126EV30LL-55BVXE has a high-speed access time of 55 ns, a clock rate of 66 MHz, and is designed to operate with 3.3V of power. It is also compatible with a wide range of other voltages.

The CY62126EV30LL-55BVXE is suitable for a variety of consumer, automotive and industrial applications such as powertrain, advanced driver-assistance systems (ADAS), gateway, networking, aerospace and defense, and IoT. It can be used in applications where low-power consumption is important, as the CY62126EV30LL-55BVXE is deigned to minimize power consumption in standby and operating modes.

The CY62126EV30LL-55BVXE is a type of synchronous SRAM. In a synchronous SRAM, accesses to memory cells are coordinated by a clock signal. When enabled, the clock signal activates the address transistors, allowing the desired address to be accessed, or written. When the clock is disabled, the transistors open, preventing access or writing to other cells in the memory array.

The CY62126EV30LL-55BVXE utilizes a pseudo-static architecture and dual-port RAM structure, allowing two independent ports to separately access the same array of cells. This allows different tasks to be completed at the same time. The dual-port architecture also allows for fast communication between devices connected to the same port.

In addition, the CY62126EV30LL-55BVXE has error checking and correction (ECC) and refresh capabilities to ensure reliable operation in harsh environments. The CY62126EV30LL-55BVXE also features a four-state output, which is ideal for multiple data transmission and reception applications.

The CY62126EV30LL-55BVXE is ideal for a variety of applications due to its combination of high performance, low power consumption, and reliability. It is well-suited for high-reliability and high-availability applications, and is equipped to handle a range of interface, protocol and power requirements.

The specific data is subject to PDF, and the above content is for reference

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