AS4C128M16D3LB-12BCN

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AS4C128M16D3LB-12BCN is a low power and high speed DDR3 type 16M X 8CMOS NVM. It is used for memory storage in various applications. This article discusses the application fields and working principle of the AS4C128M16D3LB-12BCN.

The AS4C128M16D3LB-12BCN is used in memory modules and embedded applications. Memory modules are used in personal computers, notepads, and other electronic products. It consists of a large number of individual memory chips connected in a parallel arrangement, which allows for faster data transfer rates. The AS4C128M16D3LB-12BCN is also used in embedded applications such as process control, automotive and aerospace applications.

The AS4C128M16D3LB-12BCN has a 16M x 8-bit density and uses a single power supply voltage of 1.8V. It is capable of running at speeds of up to 1600Mbps, making it suitable for high performance applications. The device contains an on-board clock generator and buffer to reduce power consumption and to increase system stability and reliability.

The working principle of the AS4C128M16D3LB-12BCN is relatively simple. The device is a read-write memory device, which means that it can both read and write data. This is done with the use of two pins; a write enable (WE) pin and a read enable (RE) pin. When the WE pin is enabled, data can be written to the memory, while when the RE pin is enabled, data can be read from the memory.

In addition to the read-write process, the device also contains a number of operational registers, which are used to control certain functions such as power management and memory timing. The operational registers are used to configure the timing and power parameters for the device, as well as to enable or disable certain features.

The AS4C128M16D3LB-12BCN is a low power, high performance memory device. Its small size, low power, and high speed make it ideal for use in a wide range of applications, from PCs and embedded systems to process control and automotive applications. With its advanced features and high speed, it is an ideal choice for memory storage in a variety of applications.

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