BR93L66RFVM-WTR Integrated Circuits (ICs)

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Memory

BR93L66RFVM-WTR is a leading technology in memory applications, providing a range of performance characteristics that make it suitable for a variety of systems and applications.

BR93L66RFVM-WTR is an FRAM (Ferroelectric Random Access Memory), a new type of memory technology which combines the capabilities of DRAM and SRAM in one chip. The main advantage of FRAM compared to traditional types of memory is that it is non-volatile, which means the data held in the memory will remain even when the system is powered down.

Compared to other non-volatile memory technologies, such as EEPROM and Flash, FRAM has several advantages. It is faster than both EEPROM and Flash, and has much higher endurance, due to its built-in ability to self-refresh. Additionally, FRAM has very low power consumption, allowing for longer battery life in mobile and embedded applications.

BR93L66RFVM-WTR is a breakthrough FRAM product, offering the highest speed, the lowest power consumption and the highest endurance in its class. It is the first FRAM product to feature a full-256-bit dual-port architecture, enabling simultaneous read and write operations. This makes BR93L66RFVM-WTR ideal for high-performance applications such as data logging, real-time data acquisition and network storage.

The working principle of BR93L66RFVM-WTR is based on the ferroelectric effect. This effect occurs when an electric field is applied to certain materials, causing it to become polarized. The polarization of the material can then be used to store data, similar to the way bits are stored in DRAM or SRAM.

The memory cells in BR93L66RFVM-WTR are arranged in a dual-port architecture, with a row and a column of cells. Each row and column is composed of 256 cells, giving a total of 65,536 cells. The dual-port architecture enables simultaneous read and write operations, allowing for faster access to data.

The BR93L66RFVM-WTR FRAM is suitable for a wide range of applications, such as data logging and real-time data acquisition, network storage, embedded systems and memory expansion. This technology is ideal for high-performance applications, as it offers very low power consumption, fast access to data, and very high endurance.

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