MB85RS128TYPNF-GS-BCERE1 Allicdata Electronics
Allicdata Part #:

865-1283-2-ND

Manufacturer Part#:

MB85RS128TYPNF-GS-BCERE1

Price: $ 1.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Fujitsu Electronics America, Inc.
Short Description: IC FRAM 128K SPI 33MHZ 8SOP
More Detail: FRAM (Ferroelectric RAM) Memory IC 128Kb (16K x 8)...
DataSheet: MB85RS128TYPNF-GS-BCERE1 datasheetMB85RS128TYPNF-GS-BCERE1 Datasheet/PDF
Quantity: 1000
1500 +: $ 1.33239
3000 +: $ 1.29667
4500 +: $ 1.24577
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: Automotive, AEC-Q100
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 128Kb (16K x 8)
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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Introduction to MB85RS128TYPNF-GS-BCERE1

Memory is a very important part for the modern computing industry. Without the proper storage of information, computers and software programs would not function properly. Therefore, it is very important for engineers to understand different types of memory and their functions. MB85RS128TYPNF-GS-BCERE1 is a serial non-volatile FRAM (Ferroelectric Random Access Memory) manufactured by Fujitsu Semiconductor. It is an 8-bit device with 128Kbits of data storage capacity. The memory cells are organized in a 4K sector by 32K blocks. This product includes security features such as ECC (Error Checking & Correction), OTP selective sector locking, and third-party authentication capability.

Application field of MB85RS128TYPNF-GS-BCERE1

MB85RS128TYPNF-GS-BCERE1 is widely used in various embedded systems such as medical equipment, industrial control systems, and automotive applications. It is an ideal memory solution for the storage of data in applications with small footprints and low power consumption. The high write endurance and low current consumption makes it suitable for battery backed-up systems. The low read latency and write time enable the device to be used for quick data access.

Working Principle of MB85RS128TYPNF-GS-BCERE1

The working principle of MB85RS128TYPNF-GS-BCERE1 is based on the fact that ferroelectric materials possess a spontaneous electric dipole. This allows ferroelectric materials to retain their polarization state even in the absence of an applied electric field. Thus, when the memory cells are charged, they remain charged until the voltage is changed. The MB85RS128TYPNF-GS-BCERE1 device is organized into two independent planes, each of which contains two planes of addressable sectors. A sector consists of 16 words, each of which contains 8 bits of data. The device contains a control logic unit and a read/write/erase unit, which are controlled by instructions sent by an external source.The control logic unit manages the entire device operation. It receives instructions from an external device and decodes them. The control logic unit also handles write and erase cycles. The read/write/erase unit is responsible for actually reading, writing, and erasing the memory cells.

Conclusion

MB85RS128TYPNF-GS-BCERE1 is a serial non-volatile FRAM (Ferroelectric Random Access Memory) manufactured by Fujitsu Semiconductor. It is widely used in embedded systems such as medical equipment, industrial control systems, and automotive applications. The device is organized into two planes, each of which contains two planes of addressable sectors. The control logic unit manages the entire device operation and the read/write/erase unit is responsible for actually reading, writing, and erasing the memory cells.

The specific data is subject to PDF, and the above content is for reference

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