CY7C1354CV25-166AXC Allicdata Electronics
Allicdata Part #:

428-2121-ND

Manufacturer Part#:

CY7C1354CV25-166AXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 9M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: CY7C1354CV25-166AXC datasheetCY7C1354CV25-166AXC Datasheet/PDF
Quantity: 292
Stock 292Can Ship Immediately
Specifications
Series: NoBL™
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: --
Access Time: 3.5ns
Memory Interface: Parallel
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)
Base Part Number: CY7C1354
Description

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The CY7C1354CV25-166AXC is a type of memory: specifically, it is a dual-rank dual-bank synchronous high-performance DRAM (DDR3 SDRAM). This memory module is 4 GB (Gigabytes) in size. Its purpose is to provide high-speed data storage for workstations and servers. It is designed to be used in embedded systems and data processing applications.

The CY7C1354CV25-166AXC employs DDR3 technology, which provides an experience in memory speed and throughput. It is a dual-bank memory chip, which offers increased throughput and parallelism. The memory module is rated for a maximum transfer rate of 1600 MHz and timings of 9-9-9 or 10-10-10. It has a paralellism of 4:8, meaning that it can process up to 8 memory transactions at any given time.

The working principle of the CY7C1354CV25-166AXC is based on the concept of DRAM (Dynamic Random Access Memory). This memory type is composed of an array of memory cells which store information in binary form. In order to access a piece of information, the memory cells are organized into a rectangular array of rows and columns. When data is stored, the information is written onto individual memory cells, each of which corresponds to a location in the array. To access the data, the memory controller sends a signal to a row, which activates the entire row. The data can then be accessed, retrieved or written to all the cells on the activated row.

The CY7C1354CV25-166AXC is often used in applications such as gaming PCs, high-end servers, graphic processing units (GPUs), and virtual reality (VR) applications. It is a reliable and fast memory module, offering high speeds and low latency. As a result, it is ideal for applications that require access to large amounts of data and high throughput.

In addition, the CY7C1354CV25-166AXC is also widely used in industrial applications such as process control, instrumentation, and automated test systems. Its robust architecture ensures reliable data storage and transfer, while its high-speed operation and low latency enable it to respond quickly to changing input signals. Lastly, its low power consumption and extended temperature range make it suitable for use in extreme conditions.

To sum up, the CY7C1354CV25-166AXC is a high-performance DRAM used in a number of applications. It is a 4GB dual-rank dual-bank memory module, rated for an impressive maximum transfer rate of 1600 MHz. It has a parallelism of 4:8, allowing it to process up to 8 memory transactions at any given time. Its reliability and fast speed make it ideal for use in data processing applications, gaming PCs, servers, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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