CY62128EV30LL-45ZAXI Allicdata Electronics
Allicdata Part #:

428-2066-ND

Manufacturer Part#:

CY62128EV30LL-45ZAXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 32STSOP
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: CY62128EV30LL-45ZAXI datasheetCY62128EV30LL-45ZAXI Datasheet/PDF
Quantity: 34
Stock 34Can Ship Immediately
Specifications
Series: MoBL®
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP
Base Part Number: CY62128
Description

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CY62128EV30LL-45ZAXI Application Field and Working Principle

CY62128EV30LL-45ZAXI is a type of memory integrated circuit (IC) produced by Cypress Semiconductor. It is designed as an Electrically Erasable and Programmable Read Only Memory (EEPROM), which is more reliable and versatile than other types of memory.

Application Field

CY62128EV30LL-45ZAXI is mainly used in applications that require a non-volatile memory solution. Examples include automobiles, aircraft, industrial machines, medical devices, office equipment, consumer goods, etc. Non-volatile memory applications often require a high level of security and reliability, which can only be provided by a EEPROM like the CY62128EV30LL-45ZAXI.

Another area of application is in embedded systems that require densely populated and easily accessible non-volatile memory. Such systems include embedded processor-based systems, digital communication systems and multimedia systems. The compact size and low power consumption make this IC an ideal choice for these types of applications.

Working Principle

The CY62128EV30LL-45ZAXI is based on the concept of floating gate technology. This memory IC utilizes a single transistor to store a single bit of information (1 or 0). Two metal-oxide-semiconductor (MOS) transistors are connected in series and the drain of the first transistor is used as the source for the second transistor. An oxide-Si3N4-Al2O3-SiO2(ONO) sandwich layer is added between the source and drain of the first transistor to form the memory cell.

At each cell, the source and drain of the first transistor act as the control gates of the second transistor. A positive voltage applied to the control gates of the second transistor will turn it ON and result in a 1 stored in the memory cell. When a negative voltage is applied, the second transistor turns OFF and a 0 is stored.

The CY62128EV30LL-45ZAXI has a wide voltage-operating range, making it suitable for many applications. It can be operated at a wide range of temperatures and its low self-erasure rate makes it an ideal choice for memory applications.

Conclusion

The CY62128EV30LL-45ZAXI is a type of non-volatile memory IC. It is based on the concept of floating gate technology and provides a higher level of reliability and security than other types of memory. It is used in applications that require densely populated and easily accessible non-volatile memory, as well as in consumer goods, office equipment, industrial machines, medical devices, aircraft and automobiles. The CY62128EV30LL-45ZAXI is widely regarded as one of the best choices for EEPROM and non-volatile memory applications.

The specific data is subject to PDF, and the above content is for reference

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