70V08L20PFGI Allicdata Electronics
Allicdata Part #:

70V08L20PFGI-ND

Manufacturer Part#:

70V08L20PFGI

Price: $ 38.16
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 512K PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 512Kb (64...
DataSheet: 70V08L20PFGI datasheet70V08L20PFGI Datasheet/PDF
Quantity: 16
1 +: $ 34.68780
10 +: $ 32.16780
Stock 16Can Ship Immediately
$ 38.16
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT70V08
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory technology has come a long way in terms of both capacity and performance. The 70V08L20PFGI is a memory product that resides at the premium end of this technological stack. Let’s take a closer look at the 70V08L20PFGI application field and working principle.

Application Field

The 70V08L20PFGI is a Non-Volatile Memory (NVM) chip with 20 Gb of capacity. This makes it suitable for a variety of applications, ranging from embedded systems to enterprise storage. In embedded systems, the 70V08L20PFGI can store a massive amount of data and instructions to power even the most complex applications. Its combination of speed (1000 Mbps) and endurance (500K program/erase cycles) further add to its appeal for embedded use-cases.

The 70V08L20PFGI can also be used in enterprise storage scenarios. Its high storage capacity and power efficiency make it an ideal choice for enterprise storage systems. Its low latency and power consumption makes it a great choice for enterprise applications that require low latency, high performance access to data. This makes the 70V08L20PFGI an ideal choice for enterprise systems such as web, file, and database servers.

Working Principle

The 70V08L20PFGI works by using an array of non-volatile 3D memory cells. These memory cells are arranged in an array and connected to a set of ‘word lines’ and ‘bit lines’ that control their operations. The memory cell operates by storing charge in a capacitance element, which is then read by activating various word and bit lines. The 70V08L20PFGI has a “Write/Erase” scheme, where the state of a cell can be changed in two cycles. First, the cell is written with the data to be stored and then, the cell is erased to clear the contents of the cell.

The 70V08L20PFGI also features a low electrostatic discharge (ESD) junction. This helps to protect the memory cells from discharges and helps to maintain data integrity. The low ESD junction also helps to reduce the total power consumption of the 70V08L20PFGI compared to other similar devices, making it even more power efficient.

Conclusion

In conclusion, the 70V08L20PFGI is a Non-Volatile Memory (NVM) chip with 20 Gb of capacity. Its combination of speed, endurance and power efficiency makes it ideal for a range of uses from embedded systems to enterprise storage. Its low power and low latency makes it an ideal choice for enterprise applications. Finally, its low ESD junction helps to protect the memory cells from damage, thereby extending the life of the device.

The specific data is subject to PDF, and the above content is for reference

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