S29GL01GS11TFIV10 Integrated Circuits (ICs) |
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Allicdata Part #: | 1274-1080-ND |
Manufacturer Part#: |
S29GL01GS11TFIV10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110... |
DataSheet: | S29GL01GS11TFIV10 Datasheet/PDF |
Quantity: | 1000 |
Series: | GL-S |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (64M x 16) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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S29GL01GS11TFIV10 is an one-time programmable type memory chip which is integrated with a high-performance NOR flash memory. It has high reliability, low power consumption and fast access speed when compared with other types of memory, making it suitable for a wide range of applications. This article focuses on the application fields and working principles of S29GL01GS11TFIV10 memory.
Application Fields
The S29GL01GS11TFIV10 is mainly applied in the automotive industry and other industries where reliability and performance are important, such as industrial and medical control systems. It can also be used in data storage and information security parameters, as it offers better performance and more protection than other more common types of memory. Additionally, it can be used in safety critical systems. It is readily available in a large variety of capacity points, making it suitable for a wide range of applications.
Working Principle
The S29GL01GS11TFIV10 is not an EEPROM but rather a NOR flash memory. This means that it is capable of store a limited amount of data, but does not require a continuous power supply to retain its content. Data can be written to and retrieved from the memory through 8, 16 or 32-bit wide parallel interface. It also uses a 3V power supply, making it suitable for rugged and space-constrained design environments. Moreover, it comes in a small package size, which is advantageous in terms of board space savings.
The S29GL01GS11TFIV10 can be divided into two memory cells, one for code storage and one for data storage. Each cell can be programmed using an appropriate programming algorithm. The code can be programmed using 1011 instructions. Once programmed, the code is written to an internal erase/program register and then physically stored into the memory cell. The data can be programmed using different types of instructions, depending on the application. The data is written to an internal program/erase register and then stored physically into the memory. Additionally, the data can also be read from the register whenever necessary.
The S29GL01GS11TFIV10 offers the possibility to write and read data sequentially or separately, enabling users to create their own memory architectures. For example, the memory can be configured to store data as a combination of words, and bit manipulation is possible to create applications that require complex data structures. It is also possible to store data as pages, making it suitable for specific applications. Additionally, the memory chip is equipped with different modes for erasing and programming, allowing for fast access that can be used in combination with memory spanning.
The S29GL01GS11TFIV10 is a highly reliable and powerful type of memory chip. Thanks to its high performance, low power consumption, easy programming, and wide range of capacity points, it can be used in a variety of applications, ranging from automotive to industrial and medical control systems. These features make it suitable for safety critical systems, information security, and data storage purposes.
The specific data is subject to PDF, and the above content is for reference
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