IS42S81600F-7TL-TR Allicdata Electronics
Allicdata Part #:

IS42S81600F-7TL-TR-ND

Manufacturer Part#:

IS42S81600F-7TL-TR

Price: $ 1.80
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (16M x 8) Parallel 143MHz 5....
DataSheet: IS42S81600F-7TL-TR datasheetIS42S81600F-7TL-TR Datasheet/PDF
Quantity: 1000
1500 +: $ 1.63318
Stock 1000Can Ship Immediately
$ 1.8
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (16M x 8)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: --
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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The IS42S81600F-7TL-TR memory is a product from the ISSI family of static RAMs (SRAMs). It is a non-volatile memory device that stores data and instructions on a semiconductor chip. It is an ideal solution for applications such as data buffering, data back-up, data synchronization, and system-level security.

The IS42S81600F has two main features that make it a great memory solution. First, it is a low-power, high-density device. Second, it provides a high level of reliability and endurance. This makes it an excellent choice for applications where system security is critical.

The IS42S81600F is a static random-access memory (SRAM). SRAM is a type of non-volatile memory that stores data and instructions even after power has been removed. SRAM is fast and can access any memory location in a fraction of a second. It also has a high data rate, which means that it can handle large amounts of data quickly and efficiently.

The IS42S81600F has a 16Mbit capacity and an access time of 70ns. It is organized as 1,048,576 words of 16 bits each. The memory is arranged in a 512K x 32 bits configuration. This device operates from a single 3V supply. The device is optimized for low voltage operation, keeping power consumption to a minimum.

The IS42S81600F-7TL-TR is designed for use in embedded applications. It is ideal for wireless communication systems, industrial, automotive, and consumer products. Because of its reliable, high-speed operation and low power consumption, the IS42S81600F is a great choice for applications that require reliable data storage and access at speed.

The working principle of the IS42S81600F-7TL-TR memory is fairly straightforward. Data is stored in memory cells, which are densely arranged on the chip surface in a regular array. These cells are electrically connected to address lines and a data bus. When an address is provided on the address lines, the data stored at that address is read out onto the data bus. The data is then available for transfer to or from the memory.

The IS42S81600F-7TL-TR can perform both sequential and random access operations. For sequential access, the address lines are provided with a continuous sequence of addresses and the memory device sequentially reads out data from each successive address. For random access, an address is provided on the address lines and the memory device reads the data from that address only.

To write data to the IS42S81600F-7TL-TR, data is placed on the data bus and an address is provided on the address lines. The data is then written to the specified address. This process is repeated as needed until all the desired data has been written.

The IS42S81600F-7TL-TR memory is a reliable, high-speed, low-power device that is well-suited for embedded applications. With its 16Mbit capacity, fast access times, and low power consumption, the IS42S81600F-7TL-TR is an ideal memory solution for applications that require reliable data storage and access at speed.

The specific data is subject to PDF, and the above content is for reference

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