Memory

S25FL128SDPNFI000 is a low-voltage single-level cell (SLC) NAND Flash Memory device. It features advanced memory storage technology that makes it suitable for use in a variety of applications. It is a compact, durable and reliable device with a wide variety of features, making it a great choice for applications requiring high memory storage capacity.

Application Field

S25FL128SDPNFI000 makes it possible to use this device in a number of applications. It can be used for non-volatile storage of code and data for embedded systems and for implementing parameter storage systems. It is also used for digital still cameras and other consumer electronics. With the advanced flash memory storage technology, the device can be used for industrial network storage and control systems, data logging systems and audio storage. The device also finds use in automotive applications and as a block storage device for boot code and general-purpose storages.

Working Principle

The S25FL128SDPNFI000 is a standard CMOS logic NAND Flash Memory device that is designed to provide high-capacity non-volatile storage for embedded applications. It employs NAND (not-AND) technology with a minimum of two transistors, which allows for faster programming times, higher density, and lower power consumption. The access procedure for data within the device is referred to as the read/write cycle. This cycle involves first erasing a block of memory cells and then programming the block with desired data. This process allows data to be read from and written to the device at speeds up to 66MB/sec.

The device utilizes two kinds of commands; the command set and the partial programming set. The command set is used when a full page of data needs to be written or erased. However, the partial programming set allows only a portion of a page to be written or erased, which is important when just a few bits of data need to be modified in a page.

The device features a fast-read capability that allows data to be read out in less than a microsecond and at speeds up to 66MB/s. It also features an advanced ECC (Error-Correcting Code) for higher data integrity and a built-in low voltage detection circuit which helps to reduce system power consumption.

Conclusion

The S25FL128SDPNFI000 is a low-voltage, single-level cell NAND Flash Memory device that utilizes advanced NAND Flash memory storage technology. It is a great choice for applications requiring high memory storage capacity and is suitable for a variety of applications, such as non-volatile storage of code and data in embedded systems and for digital still cameras. The device features fast-read capability, advanced ECC and low voltage detection which makes it a reliable and durable choice for use in a wide range of situations.