Allicdata Part #: | CY62147GN18-55BVXI-ND |
Manufacturer Part#: |
CY62147GN18-55BVXI |
Price: | $ 2.83 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para... |
DataSheet: | CY62147GN18-55BVXI Datasheet/PDF |
Quantity: | 1000 |
480 +: | $ 2.56992 |
Series: | MoBL® |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 2.2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-VFBGA |
Supplier Device Package: | 48-VFBGA (6x8) |
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The CY62147GN18-55BVXI Is a Static Random Access Memory (SRAM) chip designed as a drop-in replacement for the Original Equipment Manufacturer\'s (OEM) 32K x 8bits DRAM. It is a static RAM made up of several hundred thousand transistors to store data without the need for regular refreshes that a DRAM chip needs. It has a wide range of applications such as embedded applications and data storage. CY62147GN18-55BVXI has an advanced low power and low-voltage CMOS technology. It has a static power dissipation of less than 80 mW typ at 3.3V and 15 mW typ at 2.5V. To reduce the chip’s total power consumption, there is a power-down feature capable of putting the chip into a low power state faster than conventional DRAM chips.
Application Field of CY62147GN18-55BVXI
CY62147GN18-55BVXI is targeted at low-power and low-cost embedded applications. It is most suited for applications where regular DRAM memory systems are respectively power limited and pinch point-cost limited, such as Digital Signal Processors (DSP), cameras, portable hand held devices, automotive and industrial applications.
Working Principle of CY62147GN18-55BVXI
The CY62147GN18-55BVXI Static RAM chip is based on the MOSFET access transistor architecture with a differential sense amplifier, virtual ground technique and output buffer. When operated correctly, the CY62147GN18-55BVXI stores and retains data autonomously. During read cycles, data from the memory cell is translated through the output buffers to an off-chip circuit. Address and data inputs of the chip provide access to the contents of the memory array. Data operations for each individual cell, including read, write, test and clear operations are made possible by the memory control input logic and power supply interface.
Conclusion
In conclusion, the CY62147GN18-55BVXI static random access memory chip is a low-power, low-voltage chip with a wide range of applications. It includes features such as power-down mode and fast access time, and it is ideal for low-power, low-cost embedded applications.
The specific data is subject to PDF, and the above content is for reference
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