CY62138FLL-45SXI Allicdata Electronics
Allicdata Part #:

CY62138FLL-45SXI-ND

Manufacturer Part#:

CY62138FLL-45SXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 2M PARALLEL 32SOIC
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: CY62138FLL-45SXI datasheetCY62138FLL-45SXI Datasheet/PDF
Quantity: 9
Stock 9Can Ship Immediately
Specifications
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOIC
Base Part Number: CY62138
Series: MoBL®
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Description

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The CY62138FLL-45SXI is a type of memory which is frequently used in many applications today. It is a high-performance and low-power 8-bit CMOS Static RAM (SRAM) with a maximum operating frequency of 45MHz. The device has an extended temperature range from -40°C to +105°C and is suitable for industrial, consumer and automotive applications.

The CY62138FLL-45SXI offers a low-power design, asynchronous page mode read/write for high-speed data access, self-timed write operations, and an array of built-in features that provide the highest level of system protection. The device is available in an 8-bit version (CY62138FLL-45SXI) and a 4-bit version (CY62138FLL-45SXI-4B).

The CY62138FLL-45SXI is ideal for applications such as automotive engine controls, data logging, remote control systems, and embedded control systems where fast data retrieval and manipulation is needed. It is available in 28 pin VFBGA and QFN packages, making it ideal for space-constrained applications.

The device\'s architecture is based on a multiple memory cell structure using a 2-transistor paired-cell configuration. This configuration improves performance and latency while reducing power consumption when compared to other SRAM types. The paired cell also reduces the number of access transistors required, thus decreasing the memory cell area.

When it comes to working principle, a read or write operation is performed by asserting the appropriate address and control signals. During a read cycle, the contents of the address location are driven onto the output bus by activating the output enable signal. During a write cycle, data is written to the address location by activating the write enable signal. The CY62138FLL-45SXI features a built-in write-protect signal which allows a write to take place only if write-protect is de-asserted.

Asynchronous page mode operations are available on the CY62138FLL-45SXI, which allows faster data rates than conventional single-access memory. When data is continuously accessed at the same row address location, the device can enter the asynchronous page read or write mode. In this mode, sequential access can be performed at much higher speeds with shorter latency than single-access cycles.

In addition, the CY62138FLL-45SXI incorporates several features that provide the highest level of system protection. These features include built-in self-timed write operations, read enable/write enable control signals and several other features such as voltage and temperature monitoring, and logic level clamps to protect against voltage and temperature excursions.

The CY62138FLL-45SXI is a high-performance, low power 8-bit CMOS Static RAM with a maximum operating frequency of 45MHz. It offers an extended temperature range, asynchronous page mode read/write operations, and a variety of built-in protection features. The device provides a high level of performance and reliability in a small package, making it suitable for a wide range of industrial, consumer and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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