S29GL256S10TFB013

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Introduction

S29GL256S10TFB013 is a single-action, burst access-type static random access memory (SRAM) brought to you by Advanced Micro Devices (AMD) designed specifically to integrate within today’s highly integrated digital systems. This non-volatile memory device offers an attractive combination of speed, density and cost savings—making it perfectly suited for data buffering and firmware applications.

Application Field

S29GL256S10TFB013 is well suited for markets where high data rate and need for embedded memory are key requirements, such as industrial and security automation, digital signal processing (DSP) and telecommunications. This device offers power control and improved power consumption, making it appropriate for battery-powered applications as well as vehicles. Additionally, its high-density memory areasenables designers to reduce the PCB area.

The device has an architecture which enables users to place code and data in the same memory device without any code-data contention. The small footprint, robust cycle-by-cycle at-speed testing and boundary scan capabilities make S29GL256S10TFB013 ideal for applications such as flash boot-loadable products and minimal system architectures.

Working Principle

S29GL256S10TFB013 SRAM is an asynchronous device accessed from one-port or multiple ports with the read/write operations controlled by its associated address and control signals. The SRAM combines the ease of static RAM operation with fast access times (0 ns option). The device has a separate chip enable input, which is active-LOW, and write enable input, which is active-HIGH. On-chip control circuitry can optionally provide write protection on selected or all blocks of memory. An inherent data retention circuit provides additional security.

Bytes located in the memory array can be operated as indivisible bytes or as four bit blocks. The S29GL256S10TFB013 features a current-mode I/O circuit for improved noise margins and for compatibility with modern system buses. It also features burst operation for higher oper-ating efficiency when large blocks of data are handled. The device supports burst lengths from one to eight, with a single -cycle access. The operating mode is programmed using the burst length and page size inputs.

Conclusion

S29GL256S10TFB013 SRAM is a powerful device specifically designed for a variety of applications including data buffering, firmware applications and more. With high data rate and embedded memory, this device can be used in markets such as industrial, security automation, digital signal processing and telecommunications. Additionally, the device provides improved power consumption, and the architecture allows users to place code and data in the same memory device with no code-data contention. Enhanced cycle-by-cycle at-speed testing and boundary scan capabilities are another beneficial feature of this device, making it important in fields such as flash boot-loadable products and minimal system architectures.

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