S29GL128N90FFAR22 Allicdata Electronics
Allicdata Part #:

S29GL128N90FFAR22-ND

Manufacturer Part#:

S29GL128N90FFAR22

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 128M PARALLEL
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par...
DataSheet: S29GL128N90FFAR22 datasheetS29GL128N90FFAR22 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100, GL-N
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The S29GL128N90FFAR22 is a high-performance Memory. It is especially suitable for use in low power and high performance system architectures. The device is well suited for applications such as automotive, industrial and medical applications. It offers a wide range of features, including high speed data rate, low power consumption, and multiple data bus protocols.

S29GL128N90FFAR22 Application Field

The S29GL128N90FFAR22 has a wide range of applications in a variety of industries. It is used in automotive applications as a control unit, electronic steering systems, and engine control systems. It is also used in industrial applications such as machine tools, robotics, and test and measurement equipment. In the medical field, this Memory can be used for patient monitoring systems, drug delivery systems, and medical imaging systems.

S29GL128N90FFAR22 Working Principle

The S29GL128N90FFAR22 Memory is designed to store data with high speed and low power consumption. It employs static random access memory (SRAM) technology, which utilizes a small number of transistors to store information in a non-volatile memory chip. The memory cells in the device are arranged in a two-dimensional array. A single row in the matrix is referred to as a word line. Each row contains multiple cells, which are referred to as bit lines. Each cell can store a single bit of information.

To write data to the memory cells, a voltage is applied to a chosen word line. This turns on the transistors associated with the bit lines. Depending on the magnitude of the voltage applied, the transistors associated with the bit lines will be switched on or off. This process is referred to as write enable. Once a voltage is applied to a word line, data is written to the memory cells associated with the bit lines in that row.

To read data from the memory cells, the address of the cell is specified by enabling the appropriate word line. This causes a voltage to be applied to the bit lines associated with the cell. The voltage on the bit lines is then measured, and the data stored in the cell either 0 or 1 is determined based on the voltage.

The S29GL128N90FFAR22 Memory offers high speed read and write access and low power consumption. This makes it an ideal choice for applications where high speed access and low power consumption are required.

The specific data is subject to PDF, and the above content is for reference

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