Allicdata Part #: | S29GL512T12DHN020-ND |
Manufacturer Part#: |
S29GL512T12DHN020 |
Price: | $ 5.58 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 12... |
DataSheet: | S29GL512T12DHN020 Datasheet/PDF |
Quantity: | 1000 |
260 +: | $ 5.06956 |
Series: | GL-T |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
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S29GL512T12DHN020, a form of electrically erasable programmable read-only memory (EEPROM), is commonly used in applications ranging from automotive to consumer devices. In an EEPROM, memory cells can be erased and reprogrammed electrically, letting the user store and erase data as needed. These devices offer higher speed and a greater number of functions than conventional flash memory devices and provide cost-effective, non-volatile data storage, and are therefore ideal for a variety of applications.
The S29GL512T12DHN020 utilizes an non-volatile 1-Gbit NAND-style NOR Flash Memory technology and is fabricated using advanced 65-nm process technology. With the ability to operate over the industrially accepted 0-to-1.8 volt voltage range, it is able to handle data transfer at four time the rate of conventional flash memories and with an array of reliable measures designed to protect against data corruption, it is suitable for use in a range of applications.
It is particularly well-suited to Vehicle Data Recorders, in-car navigation systems, car and home audio systems, digital photography, point-of-sale terminals, and other devices that require securing and reliable data storage. With its high-speed random access and low-energy consumption, it is a cost-effective solution in the automotive application market.
The S29GL512T12DHN020 works by making use of a Floating Gate MOSFET (FGMOS) structure to store data. During the reprogramming process, electrons, an incredibly tiny unit of electric charge, are placed in a layer of oxynitride material located between the FGMOS channel and source. This state is known as a Programmed State. During the erasing process, electrons are sent to the Floating Gate MOSFET channel that consequently carries them to the oxynitride layer, thus erasing the Programmed State.
In addition, the S29GL512T12DHN020 offers a number of features to enhance the user experience. These include a Page Read and Program feature that allow for Program and Read operations over the same page and fast erase times. The device also features a unique device signature to identify the device and a higher bit-error rate, which is the data rate at which errors in the data become detectable. Finally, the architecture of the device ensures that the data is non-volatile and stored even after power has been removed.
The S29GL512T12DHN020 EEPROM is a versatile and highly reliable form of non-volatile memory technology. With its ability to operate using common voltage ranges, easy operation, and higher bit-error rate, it is suitable for a range of applications. Its fast erase time and page read and program feature make it ideal for automotive applications while its low energy requirement makes it suitable for consumer devices.
The specific data is subject to PDF, and the above content is for reference
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