FM25V10-GTR Integrated Circuits (ICs) |
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Allicdata Part #: | 428-3545-2-ND |
Manufacturer Part#: |
FM25V10-GTR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FRAM 1M SPI 40MHZ 8SOIC |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) ... |
DataSheet: | FM25V10-GTR Datasheet/PDF |
Quantity: | 1000 |
Series: | F-RAM™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | FM25V10 |
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The FM25V10-GTR is a one-time programmable non-volatile ferroelectric memory, developed by FUJITSU Semiconductor. It is based on the ferroelectric RAM technology, and combines the characteristics of non-volatility and high-endurance. The FM25V10-GTR is the first application field of the FM25V10-GTR in the consumer market.
Since the FM25V10-GTR comes with high endurance and power reliability, it is an ideal for applications requiring data retention and speed, such as digital cameras, digital music players, data loggers, microcontrollers, and embedded systems. Furthermore, its non-volatile nature makes it resistant to random power loss and unpredictable power surges, providing extra protection for data and functionality.
The FM25V10-GTR has a simple working principle. All it takes is two voltage signals: one to clear the memory and the other to write data. It is also capable of automatically detecting the write data, making it ideal for read/write operations. The FM25V10-GTR has an internal write data protection circuit that prevents accidental overwrite, ensuring data integrity and reliability.
The FM25V10-GTR supports two types of Refresh mode: Burst Refresh and Partial Refresh. In Burst Refresh, all cells of the memory array are automatically refreshed at a predetermined period for improved data retention and accuracy. In Partial Refresh, only the cells which have been written are refreshed to reduce power consumption and improve data retention accuracy.
In addition, the FM25V10-GTR also supports various security features such as write protection, soft-lock protection and a write password. The write protection prevents any unauthorized access to the memory, while the soft-lock protection prevents accidental unlocking of the device. The write password provides an added level of security by restricting writing operation to only those with a valid password.
The FM25V10-GTR is an ideal memory solution for many applications requiring reliable storage in an efficient and cost-effective way. It boasts excellent power efficiency, data retention and endurance, providing a reliable and secure memory solution.
The specific data is subject to PDF, and the above content is for reference
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