Allicdata Part #: | S29GL512T11TFV020-ND |
Manufacturer Part#: |
S29GL512T11TFV020 |
Price: | $ 6.52 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 11... |
DataSheet: | S29GL512T11TFV020 Datasheet/PDF |
Quantity: | 91 |
1 +: | $ 5.93460 |
Series: | GL-T |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
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Memory
The S29GL512T11TFV020 is a type of memory device that can be used in a variety of applications. It is a 512 Mbit (64 Megabyte) Single Power Flash Memory Device with a 3.3 Volt operating voltage, and it is based on a synchronous SRAM design.
The device is available in several package options, including TSOP (to-46), BGA (ball-grid array), TQFP (thin quad flat pack), and SFN (solder-filled no-lead). The device is designed to be used with industry-standard connection standards such as BGA, TSOP, and TQFP.
S29GL512T11TFV020 is designed to provide high-density, high-speed data storage for both read-only and programmable memory interfaces. It has a powerful controller and memory support that enables it to support multiple interface levels, from asynchronous SRAM to synchronous SRAM and even NOR flash. The device can be used in applications ranging from consumer and industrial grade products to automotive and aerospace systems.
Working Principle
The working principle of the S29GL512T11TFV020 is based on a synchronous SRAM design. This type of memory is characterized by an architecture in which the memory cells are connected in an organized way to allow multiple accesses to the data in a single read or write cycle. The operating process involves the use of address and data buses to access a specific memory location, where data is then stored. The device also features cache storage and block management capabilities, which enable faster data access and improved reliability.
The device also features a write-protect feature, which prevents accidental writing or erasing of data in the memory. It is also designed to support error detection and correction, providing reliable data access and improved data integrity. Additionally, the device supports multiple power modes and data protection schemes, enabling users to optimize performance and battery life.
Application Fields
The S29GL512T11TFV020 is widely used in memory-intensive applications across a variety of industries. Such applications include automotive, industrial, consumer electronics, medical, and aerospace applications. Its precise timing, high speed, and high-density make it an ideal solution for mission-critical applications, as well as for high-volume data storage.
The device is also popular for environments subjected to extreme temperatures and other harsh conditions. It is designed for high-temperature operation, making it suitable for automotive and aerospace applications. Additionally, its low-power state and fast wake-up operation enable the device to be used in battery-powered applications, such as wireless sensors and handheld electronics.
In summary, the S29GL512T11TFV020 is a reliable and powerful memory device that is well suited for use in a variety of memory-intensive applications. Its powerful controller, versatile interfaces, and low-power state make it an attractive choice for both industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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