AS4C64M32MD1-5BINTR

Memory: AS4C64M32MD1-5BINTR Application Field and Working Principle

AS4C64M32MD1-5BINTR represents a high-performance CMOS Static Random Access memory (SRAM) device organized as 8M words by 64 bits. It is designed and fabricated using advanced CMOS Technology to achieve both low-power consumption and medium-density. It is offered in the standard TSOP-II package, in the center of which is an 8M x 64 bit array. The address inputs are multiplexed, the RAS and CAS are the same, and the data outputs are multiplexed. The AS4C64M32MD1-5BINTR therefore offers increased system performance and simplified design.

Parameters and Features

The AS4C64M32MD1-5BINTR employs a high-speed CMOS technology, allowing access times as low as 10ns. It also features output enable (OE) and output enable 3 (OE3) control inputs, allowing data bus utilization and more efficient memory access. This SRAM device is offered in an 84-pin plastic TSOP-II, configured to operate in the operating temperature range of 0°C to 70°C, and in the voltage range of 2.7 V to 3.6 V.

The AS4C64M32MD1-5BINTR is available with a density range of 32Mwords of 64-bits, with both serial and asynchronous read/write operations, and features an easy interchange between application system and existing systems. It also offers bidirectional data signalling interfaces compatible with both 1-D and 2-D data communications protocols.

Applications

The AS4C64M32MD1-5BINTR SRAM offers wide application fields, including embedded systems, communications equipment, automotive, medical, industrial control, and consumer applications. It can be used to improve system performance and reduce power consumption in mobile phones, tablets, notebooks, and other types of computing devices. In addition, it is suitable for system memory levels such as cache memory, PC memory, and main memory.

Working Principle

The AS4C64M32MD1-5BINTR SRAM operates in a synchronized, random-access control state, where the user can access randomly, sequentially, or independently to any associated byte or word. The clock or synchronous data information is used to control data operations and memory access. The device includes a high-speed 8M x 64-bit SDRAM array which is divided into two parts, each with a 64-bit wide input port and a 64-bit wide output port. The AdDER (address decode) logic decodes and activates the correct 64-bit-wide data path in response to an address. As the address is received, the requested memory word is activated, and the data is available at the output port.

The AS4C64M32MD1-5BINTR provides an output enable (OE) control line and an output enable 3 (OE3) control line. These control lines allow data access to be controlled in a very efficient manner. When the OE or OE3 control line is high, the data at the output port is disabled and the device automatically switches to low power consumption mode.

Conclusion

The AS4C64M32MD1-5BINTR SRAM is a high-performance and low-power consumption device. It offers compact configuration, high speed access times, and bidirectional data bus compatibility. It is suitable for a wide range of applications from embedded systems to high-end consumer devices. The architecture of the device ensures interoperability with existing systems and allows for easy memory configuration. This device represents a great option for applications that require high speed memory and low power consumption.