IS42SM32160E-75BLI-TR Allicdata Electronics
Allicdata Part #:

IS42SM32160E-75BLI-TR-ND

Manufacturer Part#:

IS42SM32160E-75BLI-TR

Price: $ 8.10
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 512M PARALLEL 90TFBGA
More Detail: SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel...
DataSheet: IS42SM32160E-75BLI-TR datasheetIS42SM32160E-75BLI-TR Datasheet/PDF
Quantity: 1000
2500 +: $ 7.36491
Stock 1000Can Ship Immediately
$ 8.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (16M x 32)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 6ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Description

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Introduction

IS42SM32160E-75BLI-TR is a product of ISSI, Inc., a leading supplier of specialty memory ICs. It is a 32Mbit synchronous DRAM device, housed in a 54-pin TSOP II package, which allows for very high performance operation. IS42SM32160E-75BLI-TR is well-suited to a variety of consumer and industrial applications, particularly those that require high memory bandwidth or large capacity. It also features a low-power operation for longer battery life.

Application Field

IS42SM32160E-75BLI-TR is well-suited for a wide variety of consumer, industrial and embedded applications. It can be used in a variety of digital consumer electronics such as digital cameras, digital audio players, portable media players, smart phones, personal navigation devices, and other types of electronic devices. The device also has excellent performance for industrial applications, such as measurement and control systems, medical systems and test equipment.

Its high performance operation makes it particularly suitable for applications requiring high memory bandwidth, such as video editing, professional audio design and others. Its low-power operation makes it suitable for applications where minimal power consumption is desired. It is also well-suited for embedded applications which require large memories without sacrificing performance.

Working Principle

The IS42SM32160E-75BLI-TR is designed to operate in an asynchronous manner. It uses a variety of timing signals and clock inputs to control the timing of data transfers and other operation. Data is transferred between the chip and the external memory, meaning that the chip is able to handle both read and write operations, allowing for large memory capacities.

The device also includes an on-chip cache and error-correction circuit, allowing for error-free operation and improved performance. The device is also capable of burst mode operation, meaning that it can transfer data in repeated bursts rather than individual transfers, resulting in increased transfer speeds.

Finally, the device is also capable of data-striping, meaning that the data can be split across multiple memory chips and accessed simultaneously, allowing for lower latency and increased performance.

Conclusion

The IS42SM32160E-75BLI-TR is a high-performance synchronous DRAM device, well-suited for a wide variety of applications, particularly those where large memory capacities or high memory bandwidth is desired. It features low-power operation for longer battery life and on-chip error-correction circuitry for improved operation. It is also capable of burst mode and data-striping to improve transfer rates and performance. It is an excellent choice for applications requiring high memory bandwidth or capacity.

The specific data is subject to PDF, and the above content is for reference

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