CY62167GE30-45BVXIT

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The CY62167GE30-45BVXIT is a high-performance synchronous static random access memory (SRAM) that belongs to the category of memory components. It provides an ideal solution when low power consumption and improved speed are of essence. The CY62167GE30-45BVXIT is an ideal choice for data storage in applications such as gaming consoles and smart watches, where capacity is important, but the impact on energy consumption must be taken into account.

Application Field

The CY62167GE30-45BVXIT can be used in a wide range of applications where fast response time and low power consumption are of paramount importance. Examples of applications using this memory component include but are not limited to gaming consoles, digital audio workstations, industrial robotics, medical imaging devices, cellular phones, automotive electronics, and point-of-sale systems. This component further offers versatility in terms of voltage compatibility and output configurations, making it an optimal solution for applications that require high performance, yet flexibility, in their memory components.

Working Principle

The CY62167GE30-45BVXIT works on a synchronous static random access memory (SRAM) technology. A SRAM uses a static circuit structure with a single memory cell consisting of a cross-coupled pair of MOSFET transistors with the output being held at the "1" or "0" state with address-controlled switches. In comparison, a dynamic RAM (DRAM) uses a single transistor with capacitance to store each bit of data. With SRAM, the data is stored securely and can be transferred between circuits quickly and reliably. With SRAM, the data transfers can be carried out faster when using the same relative power compared to DRAM. The CY62167GE30-45BVXIT is designed to offer even better performance and a greater data storage capacity.

The CY62167GE30-45BVXIT works thanks to the integrated blocks found inside the memory component. It has two memory blocks that each store 16Mbits of data. These memory blocks are fabricated using a low-voltage CMOS process, allowing for improved speed and reduced power consumption. The design of the chip also utilises cache architecture so that data can be quickly and efficiently transferred from the internal memory to the external memory, eliminating unnecessary power drain. In addition, the CY62167GE30-45BVXIT further offers improved data reliability, with error correction for 1- and 2-bit errors as well as cyclic redundancy checking.

Given its feature set, the CY62167GE30-45BVXIT is an ideal choice for applications requiring low power consumption and fast data transfer. It offers a high performance experience with improved speed and low power draw, while also offering a greater capacity than other memory components. It is a reliable and versatile choice, suitable for applications with limited power budgets, requiring high performance and reliability.

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