Allicdata Part #: | CY7C1061GN18-15ZSXI-ND |
Manufacturer Part#: |
CY7C1061GN18-15ZSXI |
Price: | $ 19.38 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 16M PARALLEL |
More Detail: | SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral... |
DataSheet: | CY7C1061GN18-15ZSXI Datasheet/PDF |
Quantity: | 1000 |
108 +: | $ 17.60840 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 16Mb (1M x 16) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.65 V ~ 2.2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C1061GN18-15ZSXI is a highly specialized component that is used in a variety of memory-based applications. This component falls under the category of static random access memory (SRAM). It is a component that stores data using random access memory cells that are connected by means of a regular logic network containing gates. It is a type of memory that is widely used for caching data and in memory read/writes.
The CY7C1061GN18-15ZSXI offers good performance and is well-suited for high-speed applications. With its high-speed operation, low-power consumption and robust features, this component can be used in a variety of memory-based systems. Its high operating frequency allows it to be used in high-speed applications such as DDR3, DDR4, and GDDR5.
The CY7C1061GN18-15ZSXI contains 8 memory array banks that can be accessed independently. Each memory array has 512K bits and a total of 4,096K bits storage capacity. The component offers a wide range of features such as low-power and fast write operations, random read/writes, and auto refresh. It also features on-chip error correction codes (ECC) to detect and correct errors in data. Its 16-bit data bus allows access to 8K bytes of data in a single read or write operation.
The CY7C1061GN18-15ZSXI is designed to be used in systems with high-speed operation, low-power consumption and robust features. It can also be used in applications that require data transfer at high speeds. The component features high read/write speeds and is well-suited for applications such as graphics processing, gaming, and real-time analytics.
When using the CY7C1061GN18-15ZSXI, several steps must be taken in order for it to operate correctly. First, the user must select the memory array bank in which to store the data. This is done through the selection register. Then, the user must write the data to the selected memory array bank using either the write data register or the read-modify-write data register. After the data has been written to the memory array, it can be accessed with the read data register. In order to ensure that the data is correct, the ECC must be used ; the ECC will detect any errors and correct them. Once the data has been written and read, it is important to ensure that the memory array banks are refreshed periodically in order to maintain data integrity.
The CY7C1061GN18-15ZSXI is an excellent choice for a variety of memory-based applications due to its wide range of features and low-power operation. Its high operating frequency and robust features make it suitable for high-speed applications. With its efficient and reliable operation, the CY7C1061GN18-15ZSXI is an excellent option for memory-based systems.
The specific data is subject to PDF, and the above content is for reference
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