Allicdata Part #: | IS49NLC36800-33WBLI-ND |
Manufacturer Part#: |
IS49NLC36800-33WBLI |
Price: | $ 30.46 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 288M PARALLEL 300MHZ |
More Detail: | DRAM Memory IC 288Mb (8M x 36) Parallel 300MHz 20n... |
DataSheet: | IS49NLC36800-33WBLI Datasheet/PDF |
Quantity: | 1000 |
104 +: | $ 27.69620 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 288Mb (8M x 36) |
Clock Frequency: | 300MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 20ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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IS49NLC36800-33WBLI is a type of IC DRAM, offering the highest uniform density, capacity and speed. It is typically used in the memory subsystem of high-end computer systems. In this article, we will discuss the application field and working principle of IS49NLC36800-33WBLI.
Application Field
IS49NLC36800-33WBLI is an ideal choice for a variety of applications. It is suitable for high-end workstations, game consoles, and server platforms. It is also an excellent solution for multimedia applications, such as video editing and 3D rendering. Due to its large capacity and high speed, it is also well suited for embedded systems, enabling users to take advantage of large-scale applications. Additionally, long-term storage applications, such as archiving, can also benefit from using this product.
Working Principle
IS49NLC36800-33WBLI is an asynchronous DRAM designed for use in high-frequency systems. It uses asynchronous edge triggered flip-flop memory access timing to achieve maximum throughput. The edge-triggered architecture functions as a memory controller that enables the processor to access data quickly. The device is divided into multiple banks, which allow for concurrent access. Each bank consists of a control register and a group of cells. The control register is responsible for controlling the access of data in the cells. It is also responsible for regulating the supply voltage.
In order to access the data in the cells, the control register requires the address to be given. Once the address is given, the control register will generate a set of seven addresses corresponding to each of the banks. The processor then initiates a read or write request for each of these addresses. The data is written or read from the corresponding cells using the respective bank address. The processor can then check the status of the transaction via a status register.
The IS49NLC36800-33WBLI also features a refresh operation that is needed to maintain the data in the DRAM. This operation is done automatically, and is controlled by the refresh logic of the device. The refresh logic uses counters to ensure that the refresh procedure is done in a timely manner. The refresh operation is done periodically, so that the data in the DRAM is not lost due to refreshing.
The IS49NLC36800-33WBLI is a state of the art memory device. Its large capacity, high speed, and low power consumption makes it an ideal solution for high-end applications. It also provides excellent stability and reliability, making it suitable for a variety of applications. With its edge-triggered access timing and refresh logic, it is able to offer a high level of performance.
The specific data is subject to PDF, and the above content is for reference
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IS49RL36160-093BLI | ISSI, Integr... | 88.93 $ | 1000 | IC DRAM 576M PARALLEL 168... |
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