Allicdata Part #: | IS49NLC36800-25EWBLI-ND |
Manufacturer Part#: |
IS49NLC36800-25EWBLI |
Price: | $ 33.35 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ISSI, Integrated Silicon Solution Inc |
Short Description: | IC DRAM 288M PARALLEL 400MHZ |
More Detail: | DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 15n... |
DataSheet: | IS49NLC36800-25EWBLI Datasheet/PDF |
Quantity: | 1000 |
104 +: | $ 30.31680 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | DRAM |
Memory Size: | 288Mb (8M x 36) |
Clock Frequency: | 400MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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.The IS49NLC36800-25EWBLI is a type of memory but with a unique application field and working principle.
The memory device is a high-density NAND Flash memory device designed for industrial applications. It features two full megabytes of storage with ten-bit error correcting code (ECC) for reliable data storage and retrieval. This device is built with advanced wear-leveling algorithms that extend the service life and provide superior performance in data access.
The IS49NLC36800-25EWBLI is the ideal solution for any application demanding longer life cycles, robustness data integrity and high-speed performance. It is suitable for high-speed data transfer applications, including flash memory applications such as automotive infotainment systems, industrial and medical monitors, medical equipment, military, and avionics.
The device is also equipped with advanced protection features to protect data integrity during dynamic write and erase operations. It incorporates on-die ECC protection and supports four levels of page protection, providing the highest levels of reliability and delivering superior performance in dynamic write and erase operations.
The IS49NLC36800-25EWBLI utilizes a cycle-level chip-level ECC algorithm for error correction, ensuring that data is protected and corrected at the block level and at every second fold of the cycle. This also ensures that data is maintained in single-bit error correction/detection state.
In addition, the device utilizes an advanced wear-leveling algorithm to evenly distribute data and prevent hot spots, improving the protection of electrons to provide higher levels of reliable data storage and retrieval.
The IS49NLC36800-25EWBLI is well suited to any application looking for a high-density memory device that can provide a long service life and superior performance in data access. With its robustness, data integrity and advanced protection features, the device is an ideal choice for critical industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IS49RL36160-093EBL | ISSI, Integr... | 92.18 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-093EBLI | ISSI, Integr... | 97.66 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-093EBLI | ISSI, Integr... | 97.66 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-125BL | ISSI, Integr... | 69.9 $ | 1000 | IC DRAM 576M PARALLEL 168... |
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IS49RL18320-125BLI | ISSI, Integr... | 74.05 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-125BLI | ISSI, Integr... | 74.05 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-125EBL | ISSI, Integr... | 76.67 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-125EBL | ISSI, Integr... | 76.67 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-107BL | ISSI, Integr... | 76.84 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-107BL | ISSI, Integr... | 76.84 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-107BLI | ISSI, Integr... | 81.45 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-125EBLI | ISSI, Integr... | 81.45 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-107BLI | ISSI, Integr... | 81.45 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-125EBLI | ISSI, Integr... | 81.45 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-107EBL | ISSI, Integr... | 83.78 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-107EBL | ISSI, Integr... | 83.78 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-093BL | ISSI, Integr... | 83.94 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-093BL | ISSI, Integr... | 83.94 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-107EBLI | ISSI, Integr... | 88.76 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-107EBLI | ISSI, Integr... | 88.76 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-093BLI | ISSI, Integr... | 88.93 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL36160-093BLI | ISSI, Integr... | 88.93 $ | 1000 | IC DRAM 576M PARALLEL 168... |
IS49RL18320-093EBL | ISSI, Integr... | 92.18 $ | 1000 | IC DRAM 576M PARALLEL 168... |
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IS49FL004T-33VCE | ISSI, Integr... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 32VS... |
IS49NLC18160-25B | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-25BI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-25BL | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-25BLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-33B | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-33BI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18160-33BLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 288M PARALLEL 144... |
IS49NLC18320-25B | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
IS49NLC18320-25BI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
IS49NLC18320-25BL | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
IS49NLC18320-25BLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
IS49NLC18320-25EBL | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
IS49NLC18320-25EBLI | ISSI, Integr... | 0.0 $ | 1000 | IC DRAM 576M PARALLEL 144... |
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