70V07L55G

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	68-BPGA
Supplier Device Package:	68-PGA (29.46x29.46)
Base Part Number:	IDT70V07

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70V07L55G MemoryThe 70V07L55G is a type of memory integrated circuit (IC) chip. It is used in many applications including spectrometers, imaging systems, X-ray detectors and medical imaging equipment. It is a high performance, low noise device which is designed to meet the most demanding applications.The 70V07L55G memory is designed with a high capacity storage cell, which is capable of storing up to 16Kb of data. The chip also has a low power consumption, allowing it to be used in applications which require limited power consumption. Furthermore, the 70V07L55G memory has a programmable interface, allowing the system to access and modify stored data.The specifications of the 70V07L55G memory include its capacity to store up to 16Kb of data, a clock frequency of up to 365MHz, and a voltage range from 1.8 to 3.3V. The device also employs advanced ECC (Error correction Code) technology to reduce data errors. The memory also features advanced ANSPI (Autonomous Non-Stop Programming Interface) technology which allows for data programming and verification during power cycles. Additionally, the 70V07L55G memory has an on-chip 2-ray test mode which ensures that all memory segments are tested and verified.The 70V07L55G memory is designed to provide high performance and power efficiency in a wide range of applications. The device has been designed to provide reliable storage as well as low power consumption without compromising on performance. In addition, the 70V07L55G memory supports a wide range of bus types including SATA, SCSI, NVME, and others. This allows the device to be easily integrated into existing systems and applications.The working principle of the 70V07L55G memory is based on its ability to store data in flash cells. A single flash cell can store up to 64 bits of data and the number of cells determines the total capacity of the memory. To store data, the address and data must first be supplied to the input pins of the memory. Then, through commands sent from the user, the data is written to the predetermined address. The data is stored in the memory cell until it is read or erased.The 70V07L55G memory is a powerful, low-power device which is suitable for a wide range of applications. The device has been designed with a high capacity storage cell and advanced error correction technology. The device has been designed to provide a reliable and efficient storage solution with low power consumption. Furthermore, the memory chip supports a range of bus types, which makes it easy to integrate into existing systems. Therefore, the 70V07L55G memory is a reliable and efficient storage solution.

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