70T3399S133BC8 Allicdata Electronics
Allicdata Part #:

70T3399S133BC8-ND

Manufacturer Part#:

70T3399S133BC8

Price: $ 47.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 2M PARALLEL 256CABGA
More Detail: SRAM - Dual Port, Synchronous Memory IC 2Mb (128K ...
DataSheet: 70T3399S133BC8 datasheet70T3399S133BC8 Datasheet/PDF
Quantity: 1000
1000 +: $ 43.19060
Stock 1000Can Ship Immediately
$ 47.52
Specifications
Base Part Number: IDT70T3399
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: --
Access Time: 4.2ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

What is 70T3399S133BC8 Memory? 70T3399S133BC8 Memory is a memory module with a standard DDR2 SODIMM form factor. It is the latest generation module from Samsung and it provides faster data access speeds and high-density, high-performance storage capabilities. It is designed to handle data intensive applications such as video editing, audio processing and gaming.

The 70T3399S133BC8 Memory is designed to meet the data storage and performance requirements of today’s most advanced CPUs, with outstanding reliability and durability. It features a 16-layer PCB (Printed Circuit Board) with advanced TSV (Through-Silicon-Via) technology, reducing electrical resistance by half. This provides higher speeds and improved performance.

The 70T3399S133BC8 Memory is available in a variety of configurations, including single, dual, and quad channel configurations. This allows the module to be used for a range of applications, including high-end gaming, 3D rendering, and virtualization. It is also backward-compatible with DDR3 and DDR4 memory modules, to provide users with a range of upgrade options.

The 70T3399S133BC8 Memory has a maximum capacity of 8 GB and operates at a speed of 1333 MHz. It is designed with low-voltage operation, which reduces power consumption, allowing for longer operation times. The memory module is designed to meet the latest standards in the industry, making it suitable for the most demanding applications. The module also has ECC (Error Correction Code) support, which increases reliability further.

The 70T3399S133BC8 Memory is designed to provide users with an improved working experience. It can be used for a variety of applications, including gaming, 3D rendering, and multimedia. The module is also designed for maximum performance and compatibility. It can be used for high-end gaming and virtualization, as well as for graphical and data intensive applications.

The 70T3399S133BC8 Memory is available with either unbuffered or registered versions. It is designed using process technology from Samsung, which is one of the most advanced in the industry. This technology increases performance further and enables the module to offer a host of features, including high-speed data transfer, superior overclocking potential, and low-voltage operation.

In summary, the 70T3399S133BC8 Memory is designed to meet the data storage and performance requirements of today’s most advanced CPUs. The module is available in a variety of configurations and provides users with an improved working experience. It is backed by process technology from Samsung, which increases performance and provides users with a host of additional features.

The specific data is subject to PDF, and the above content is for reference

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